2021
DOI: 10.1007/s12274-021-3587-5
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Surface disorder engineering in ZnCdS for cocatalyst free visible light driven hydrogen production

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Cited by 62 publications
(33 citation statements)
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“…In recent research, vacancy engineering (mainly S vacancy) of Zn x Cd 1Àx S has been studied for better HER performance. [39][40][41][42] The introduction of S vacancies into Zn x Cd 1Àx S semiconductor photocatalysts could maximize the regulatory role and enhance the PHE rates. [27] Furthermore, for MS photocatalysts, phosphorus-doped (P-doped) with rich S vacancies has great potential for hydrogen production via overall water splitting under visible light irradiation.…”
Section: Vacancy Engineeringmentioning
confidence: 99%
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“…In recent research, vacancy engineering (mainly S vacancy) of Zn x Cd 1Àx S has been studied for better HER performance. [39][40][41][42] The introduction of S vacancies into Zn x Cd 1Àx S semiconductor photocatalysts could maximize the regulatory role and enhance the PHE rates. [27] Furthermore, for MS photocatalysts, phosphorus-doped (P-doped) with rich S vacancies has great potential for hydrogen production via overall water splitting under visible light irradiation.…”
Section: Vacancy Engineeringmentioning
confidence: 99%
“…Ha et al studied a Zn x Cd 1− x S photocatalyst with disordered surface layers and confirmed that the rich S and Zn vacancies served as electron‐ and hole‐trapping sites, respectively. [ 42 ] As shown in Figure 4e, S and Zn vacancies act as shallow donors (electron traps) and deep acceptors (hole traps), respectively. Owing to the band potential difference, more photogenerated electrons are transferred to the Zn x Cd 1− x S surface, enhancing the PHE.…”
Section: Vacancy Engineeringmentioning
confidence: 99%
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“…After that, sulfur and zinc dual vacancies were prepared on the surface of ZnCdS by Li‐ethylenediamine treatment under room temperature. [ 92 ] The charge separation and transfer were significantly enhanced by the synergistic effect of sulfur and zinc dual vacancies, in which sulfur vacancies acted as electrons trapping sites whereas zinc vacancies served as capture center for holes. The defective ZnCdS showed a hydrogen evolution rate of 33.6 mmol h −1 g −1 under visible‐light irradiation and also exhibited long‐term stability.…”
Section: Emerging Strategies For Improving Hydrogen Production Perfor...mentioning
confidence: 99%
“…4 To overcome these obstacles, most works have focused on the half-reaction of consuming holes by adding various sacricial agents (such as triethanolamine, triethylamine and CH 3 OH) to achieve outstanding hydrogen production. [5][6][7] For practical industrial applications, replacing the sacricial agent consumption or O 2 generation with the synthesis of value-added organic chemicals would avoid pollution/waste and create higher economic value. 8,9 Imines, as signicant industrial intermediates, have been comprehensively applied in the elds of medicine and biology and other nitrogen-containing chemicals.…”
Section: Introductionmentioning
confidence: 99%