2001
DOI: 10.1016/s0304-3991(00)00096-6
|View full text |Cite
|
Sign up to set email alerts
|

Surface damage formation during ion-beam thinning of samples for transmission electron microscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

7
114
0
1

Year Published

2008
2008
2023
2023

Publication Types

Select...
7
3

Relationship

0
10

Authors

Journals

citations
Cited by 209 publications
(122 citation statements)
references
References 9 publications
7
114
0
1
Order By: Relevance
“…33 used in our theoretical calculations and the permittivity of the gold in our sample. We substantiate this point of view by the fact that the procedure of thinning the sample using FIB leads to some gallium contamination and surface amorphization of the gold, which (depending on the FIB conditions used) can influence up to tens of nanometres for each of the groove surfaces 34,35 . Note that despite the fact that this (probably) FIB-related damage affects the gold permittivity in the entire energy range considered, the discrepancy between measurements and 2D simulations at large groove widths (W\100 nm) is in any case expected as the EELS peaks are related to physically different phenomena (threedimensional (3D) localized SP and 2D groove aGSP mode, respectively).…”
Section: Numerical Simulationssupporting
confidence: 55%
“…33 used in our theoretical calculations and the permittivity of the gold in our sample. We substantiate this point of view by the fact that the procedure of thinning the sample using FIB leads to some gallium contamination and surface amorphization of the gold, which (depending on the FIB conditions used) can influence up to tens of nanometres for each of the groove surfaces 34,35 . Note that despite the fact that this (probably) FIB-related damage affects the gold permittivity in the entire energy range considered, the discrepancy between measurements and 2D simulations at large groove widths (W\100 nm) is in any case expected as the EELS peaks are related to physically different phenomena (threedimensional (3D) localized SP and 2D groove aGSP mode, respectively).…”
Section: Numerical Simulationssupporting
confidence: 55%
“…ε = ∆l/l ∼ 0.6% denotes the tensile strain. f artifacts have mainly concentrated on substrate materials and semiconductors [17,18]. However, some general conclusions can be made on the basis of our process parameters.…”
mentioning
confidence: 99%
“…In order to minimize the damaged amorphous layers, moderate-milling conditions such as low voltage, low current, 22,23) and low incidence angle 24) were proposed. We reduced the acceleration voltage of Ga ions in the FIB from 40 kV to 10 kV for studying its effect.…”
Section: Discussionmentioning
confidence: 99%