Surface core-level shifts for clean and halogen-covered Ge(100) and Ge(111)

Schnell, R.D.; Himpsel, F. J.; Bogen, A.; Rieger, D.; Steinmann, W.

doi:10.1103/physrevb.32.8052

Cited by 101 publications

(48 citation statements)

References 29 publications

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“…Despite this, the only apparent feature is a peak on the low binding energy side. Similar to Si 2p this feature has in earlier studies [11][12][13]15 been attributed to the dimer up-atom. The bulging shape on the right side of the main peak suggests that there are components hidden on the low binding energy side.…”

Section: Ge 3dsupporting

confidence: 65%

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Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations

Eriksson

Uhrberg

2010

Phys. Rev. B

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Section: Ge 3dsupporting

confidence: 65%

“…Even though the atomic origins are being debated, there is an overall agreement regarding the energy position of the major components in the Si 2p spectra. [6][7][8][9][10] The components of the Ge 3d spectrum from Ge͑001͒ are less well established [11][12][13][14][15] due to the lack of pronounced features in the spectra.…”

Section: Introductionmentioning

confidence: 99%

Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations

Eriksson

Uhrberg

2010

Phys. Rev. B

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“…Since the scanning tunneling microscopy (STM) data show a mixture of symmetric and asymmetric Si-Si dimers on the clean Si(100)-(2x1) surface [131, an adsorption modcl was invoked where 4 chlorine adsorption would convert the asymmetric dimer structure to the symmetric dimer structure [14]. Polarization-dependent angle-resolved photoemission studies [101 for chlorine adsorption (at 473K substrate temperature to prevent the weakly bound chlorine phase formation [11]) on a single domain Si(100)-(2x 1) surface indicate the presence of mirror-plane symmetry.…”

Section: Introductionmentioning

confidence: 99%

Chlorine bonding sites and bonding configurations on Si(100)–(2×1)

Gao

Cheng

Chen

et al. 1993

The Journal of Chemical Physics

114

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A combination of experimental methods has been employed for the study of Cl2 adsorption and reaction on Si(100)–(2×1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of ∼0.7 Cl/Si. This is followed by slower adsorption kinetics with further Cl2 exposure. Two Cl adsorption states are observed experimentally. One of the adsorption states is terminally bonded Cl on the inclined dangling bond of the symmetric Si2 dimer sites, with a vibrational frequency, ν(SiCl) of 550∼600 cm−1. These bonded Cl atoms give four off-normal Cl+ ESDIAD emission beams from the orthogonal domains of silicon dimer sites. The Si–Cl bond angle for this adsorption configuration is estimated to be inclined 25°±4° off-normal. The second Cl adsorption state, a minority species, is bridge bonded Cl with ν(Si2Cl) of ∼295 cm−1 which produces Cl+ ion emission along the surface normal direction. Both adsorption states are present at low temperatures. Irreversible conversion from bridge bonded Cl to terminally bonded Cl begins to occur near 300 K; the conversion is complete near ∼673 K. LEED studies indicate that the (2×1) reconstruction for the substrate is preserved for all Cl coverages. The most probable Cl+ kinetic energy in electron stimulated desorption, ESD, is 1.1−+0.30.6 eV. A significant adsorbate-adsorbate quenching effect reducing the Cl+ ion yield in ESD occurs above a Cl(a) coverage of ∼0.5 ML (monolayer) due to interadsorbate interactions. The maximum Cl+ yield is about 4×10−7 Cl+/e at an electron energy of 120 eV. Temperature programmed desorption results show that SiCl2 is the major etching product which desorbs at about 840 K.

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“…For the HCl etched surface, two doublet peaks are used in the peak fitting. 4,14 One is the Ge bulk peak, and the other has a chemical shift of 0.59 eV towards the lower kinetic energy side and a calculated coverage of 0.95± 0.24 ML ͑monolayer͒, 15 which is assigned as Ge monochloride. As for the HBr cleaned surface, Ge monobromide is formed.…”

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confidence: 99%

Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces

Sun

Liu

et al. 2006

Applied Physics Letters

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The initial stage of the oxidation of Cl and Br terminated Ge(111) surfaces is studied using photoelectron spectroscopy. The authors perform controlled experiments to differentiate the effects of different factors in oxidation, and find that water vapor and oxygen play different roles. Water vapor effectively replaces the halogen termination layers with the hydroxyl group, but does not oxidize the surfaces further. In contrast, little oxidation is observed for Cl and Br terminated surfaces with dry oxygen alone. However, with the help of water vapor, oxygen oxidizes the surface by breaking the Ge–Ge back bonds instead of changing the termination layer.

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Surface core-level shifts for clean and halogen-covered Ge(100) and Ge(111)

Cited by 101 publications

References 29 publications

Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations

Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations

Chlorine bonding sites and bonding configurations on Si(100)–(2×1)

Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces

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