Abstract:In this study, we demonstrated a GaN surface contamination and cleaning technique focused on O- and Si-based compounds generated by an exposure to the atmosphere. The GaN single-crystalline layers were grown on sapphire (0001) substrates using the ultra-high-vacuum radio-frequency sputter epitaxy technique. During X-ray photoelectron spectroscopy (XPS) measurements, O1s and Si2p XPS signals were detected on the as-grown GaN layer surface. Thermal treatment was performed in order to remove these impurities, and… Show more
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