Surface-conduction electron-emitter characteristics and fabrication based on vertically aligned carbon nanotube arrays

Shih, Yi-Pei; Li, Kuan-Wei; Honda, Shinya; Lin, P.-C.; Huang, Y. S.; Lee, Kuei‐Yi

doi:10.1016/j.apsusc.2017.02.113

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…In past years, several attempts have been made to enhance the FE properties of CNT cathodes by formation of vertically aligned CNT arrays, , optimization of CNT density, , and modification with various metal nanoparticles, − metal oxide thin films, ,, and other nanomaterials with a low work function. ,, Apart from these approaches, crack formation might be another effective way to improve the FE performance as it may simultaneously generate field emission tips and reduce the field screening effect. In fact, it has been employed in several other fields of electronic devices such as cracked electrodes − and thin film transistors. , …”

Section: Introductionmentioning

confidence: 99%

Crack-Assisted Field Emission Enhancement of Carbon Nanotube Films for Vacuum Electronics

et al. 2019

ACS Appl. Nano Mater.

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Carbon nanotubes (CNTs) have been considered to be an ideal cathode candidate for field emission applications since 1995, and there is always a trade-off between the number of emission tips and the field screening effect to achieve a high field emission performance. In this study, CNT cathode films with spontaneously formed cracks are fabricated by a simple vacuum-filtration process at room temperature without caring about the alignment of CNTs, and the crack feature can be controlled with CNT concentration. The crack-assisted field emission devices display greatly enhanced performance, and the best is achieved with pretty low turn-on field of 0.40 V/μm and threshold field of 0.55 V/μm, a recorded high field enhancement factor of 43000, and excellent field emission stability. This outstanding performance due to simultaneous increase of the emission tips and reduction of the field screening effect demonstrates the crack-assisted CNT film can be a promising candidate for field emission applications.

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Section: Introductionmentioning

confidence: 99%

Crack-Assisted Field Emission Enhancement of Carbon Nanotube Films for Vacuum Electronics

et al. 2019

ACS Appl. Nano Mater.

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“…In most vacuum microelectronic devices and the newly emerging NVCTs, electrons tunnel from solid electrodes directly into vacuum under a strong electric field. Besides this field emission mechanism, electrons are also available from surface conductance emitters, in which electrons enter vacuum after tunneling through a nano-fissure and then being scattered multiple times [15,16]. Recently, it was demonstrated that silicon oxide (SiO x ) could also work as an electron source and its electron emission mechanism somehow resembles that of surface conductance emitters [17].…”

Section: Introductionmentioning

confidence: 99%

Planar nanoscale vacuum channel transistors based on resistive switching

Zhang,

Zhan

et al. 2024

Nanotechnology

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Resistance switching (RS) offers promising applications in a variety of areas. In particular, silicon oxide (SiOx) under RS can serve as electron sources in new types of miniature vacuum electron tubes. In this work, planar nanoscale vacuum channel transistors (NVCTs) with graphene electrodes and RS SiOx electron sources were developed. In each RS-NVCT, the resistance between the ground and the gate underwent high–low–high transitions, which resulted from formation and subsequent rupture of Si conducting filaments. Electrons were emitted from the post-reset Si filaments and the current received by the collector (IC) was well controlled by the gate voltage (VG). The transfer characteristics reveal that IC was quite sensitive to VG when RS occurred. With VG sweeping from 0 to −20 V, the obtained subthreshold swing (SS) of 76 mV/dec was quite close to the theoretical limit of the SS of a field effect transistor at room temperature (60 mV/dec). The largest ON/OFF ratio was of the order of 106. The output characteristics of the devices indicate that the dependence of IC on the collector voltage (VC) weakened at high VC values. These results demonstrate the application potential of RS-NVCTs as either switching devices or amplifiers.

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Structural study of MgO and Mg-doped ZnO thin films grown by atomic layer deposition

Cora

Baji

Fogarassy

et al. 2019

Materials Science in Semiconductor Processing

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Surface-conduction electron-emitter characteristics and fabrication based on vertically aligned carbon nanotube arrays

Cited by 4 publications

References 25 publications

Crack-Assisted Field Emission Enhancement of Carbon Nanotube Films for Vacuum Electronics

Crack-Assisted Field Emission Enhancement of Carbon Nanotube Films for Vacuum Electronics

Planar nanoscale vacuum channel transistors based on resistive switching

Structural study of MgO and Mg-doped ZnO thin films grown by atomic layer deposition

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