1983
DOI: 10.1016/0378-5963(83)90049-1
|View full text |Cite
|
Sign up to set email alerts
|

Surface compositions of copper-silicon alloys

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
17
0

Year Published

1995
1995
2019
2019

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 47 publications
(17 citation statements)
references
References 25 publications
0
17
0
Order By: Relevance
“…Strongly bonded Cu may catalyze the Si-O bond breaking, since Cu also catalyzes the reverse reactions of Si-O formation. 13,14,[16][17][18] Metal evaporation as applied by others 9,21 may result in a weaker metal-support interaction 4 and, therefore, not result in a reaction between Cu and SiO 2 during UHV annealing. We note that also impurities on the sample surface or constituents of the residual gas may help to reduce SiO 2 .…”
Section: Fig 2 Aes Results Of Amentioning
confidence: 99%
See 3 more Smart Citations
“…Strongly bonded Cu may catalyze the Si-O bond breaking, since Cu also catalyzes the reverse reactions of Si-O formation. 13,14,[16][17][18] Metal evaporation as applied by others 9,21 may result in a weaker metal-support interaction 4 and, therefore, not result in a reaction between Cu and SiO 2 during UHV annealing. We note that also impurities on the sample surface or constituents of the residual gas may help to reduce SiO 2 .…”
Section: Fig 2 Aes Results Of Amentioning
confidence: 99%
“…13,14,16 Roomtemperature oxidation of Si is catalyzed by Cu 3 Si and a thick amorphous SiO 2 layer grows spontaneously beneath the Curich layer. 17,18 So the ease of regeneration of the annealed Cu/SiO 2 samples as described above can be understood from the oxidation behavior of a silicide and is another piece of evidence for the presence of Cu silicide after annealing in UHV.…”
Section: Fig 2 Aes Results Of Amentioning
confidence: 99%
See 2 more Smart Citations
“…There were two or more possible Cu nucleation on Si surface, resulting compositions were highly complex, 19 and the researchers suggested there was a high reaction activity between copper and silicon. [20][21][22][23] In this current study, we try to control the stoichiometry and microstructure of Cu x Si 1−x films on Si (001) and (111) by PLD technique. The influences of laser energy fluency, deposition temperature, substrate orientation, and heat treatments on orientations and structures, surface morphologies were investigated.…”
Section: Introductionmentioning
confidence: 99%