Surface Complexation-Based Biocompatible Magnetofluorescent Nanoprobe for Targeted Cellular Imaging

Bhandari, Satyapriya; Khandelia, Rumi; Pan, Uday Narayan; Chattopadhyay, Arun

doi:10.1021/acsami.5b04022

Cited by 26 publications

(79 citation statements)

References 32 publications

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“…This may be due to the static quenching process occurring between the Qdot and surface complex, where Zn(QS) 2 complex acts as a quencher to the dopant emission of Qdot . It is to be mentioned here that, there is an overlapping region between the emission spectrum of surface Zn(QS) 2 and absorption spectrum of Qdot, which may create the possibility of energy transfer between the two species …”

Section: Resultsmentioning

confidence: 99%

“…[42][43][44] On the other hand, the inter-QDC spacing would depend on the geometry of the complex on the surface. Our earlier observations indicated the formation of an octahedral complex, [31][32][33]43] which would make the inter particle separation shorter in comparison to other arrangements of ligand attachment on the surface. Hence, we anticipate that the reduction in hole mobility and relatively better electron transport in QDC-TFT is because of attachment of HQS ligand to the surface of Qdot in a geometry similar to HQ, i.e., octahedral.…”

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

“…[50] On the other hand, the shorter emission lifetime (λ em = 480 nm) of Zn(QS) 2 surface complex matches with our earlier reported value, which clearly indicated the formation of complex on the surface of Qdots. [31,33,45] However, the emission of Qdot at 595 nm was quenched significantly after formation of Zn(QS) 2 complex with no considerable changes in the emission lifetime of Qdot at λ em = 595 nm. This may be due to the static quenching process occurring between the Qdot and surface complex, where Zn(QS) 2 complex acts as a quencher to the dopant emission of Qdot.…”

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

“…[32,45] It is to be mentioned here that, there is an overlapping region between the emission spectrum of surface Zn(QS) 2 and absorption spectrum of Qdot, which may create the possibility of energy transfer between the two species. [33,45] Transport mechanism in Qdots are rather complex and can be explored by their temperature-dependent transport studies. Carrier transport in weakly coupled Qdots is established to occur through hopping of charge carriers from one site to another (Qdot to Qdot), whereas strongly coupled nanocrystal solids exhibit band like transport pattern.…”

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

“…It has been used for phase transfer of hydrophobic Qdots, targeted cellular imaging, pH sensing, and fabrication of single component nontoxic white light emitting nanocomposite. [31][32][33] Recently, white light emitting (WLE) Qdots have gained intense interest in the context of replacing the existing WLE solid state devices. Pioneering researches in WLE devices have been implemented by multilayered structures of individual primary color (blue, green, red) emitter nanocrystals.…”

Section: Introductionmentioning

confidence: 99%

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Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

Gogoi

Pramanik

Chattopadhyay

2020

Adv Materials Inter

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Ambipolar transport characteristics of thin film transistors fabricated from nontoxic white light emitting quantum dot complexes (QDCs) are herein reported to exhibit efficient carrier mobilities. The QDCs are synthesized by forming bluish green emitting zinc quinolate complex on the surface of orange emitting Mn2+‐doped ZnS quantum dots (Qdots) using 8‐hydroxyquinoline 5‐sulfonic acid as the chelating ligand. The device exhibits efficient ambipolar transport characteristics with high ION/IOFF ratio of 104 and electron mobility and hole mobility of 2.95 × 10−02 and 1.06 × 10−02 cm2 V−1 s−1, respectively. The subthreshold slope of Qdot complex–integrated thin film transistor increases from that of Mn2+‐doped ZnS Qdot–integrated thin film transistor from 0.35 to 0.79 V dec−1 in p‐field effect transistor (FET) and from 0.59 to 0.97 V dec−1 in n‐FET operations, which annotates an increase in trap state density due to surface complexation of the Qdot. These results suggest that white light emitting QDC can be used as an efficient transport as well as an emissive material, which open up new paradigm for advanced optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

Gogoi

Pramanik

Chattopadhyay

2020

Adv Materials Inter

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Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Liu

Chen

et al. 2018

Adv Funct Materials

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ZnS, as one of the first semiconductors discovered and a rising material star, has embraced exciting breakthroughs in the past few years. To shed light on the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review. Recent progress on modifications of ZnS allows it to be extensively and effectively used in versatile applications, including transparent conductors, UV photodetectors, luminescent devices, and catalysis, which are clearly and comprehensively summarized in this work. Novel functional devices springing up from the newly developed ZnS-based materials are highlighted as well. This review not only provides a scientific insight into the advances of ZnS-based materials, but also touches on the future opportunities in this inspiring field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802029. relatively high charge recombination rate and low charge transport process inhibit the optoelectronic properties of ZnS as a high-performance photodetector. As a window layer of optoelectronic devices, a lack of high electrical conductivity typically hinders the practical use of ZnS in solar cells, photodiodes, light-emitting devices, etc. As a photocatalyst, the transparency of ZnS becomes a drawback as it suffers from a poor utilization of sunlight.There is not a perfect material, but the potential of developing a material is beyond limitation. The past few years have witnessed extensive designing and engineering of ZnS to explore its potentials in specific applications. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] This review summarizes the recent breakthroughs on ZnS-based materials as excellent candidates in optoelectronic devices, photocatalysis, and other novel functional devices. More importantly, it sheds light on the design principles and fundamental mechanisms of the improved performance of ZnS through strategies such as developing novel nanostructures, bandgap engineering, alloying with other materials, etc. To the best of our knowledge, it is the first comprehensive review on the design principles and material engineering of ZnS for novel/improved properties and intended applications. Briefly, current literature on a variety of ZnS-based structures was first summarized, ranging from 0D to 2D nanostructures. Then, the representative applications of ZnS-based materials are described, which are mainly consisted of four parts, as shown in Figure 1: transparent conductors, UV photodetectors, luminescent devices, and catalysis. Each part contains the latest design strategies of ZnS for the intended applications, fabrication techniques, representative examples, and the state-of-the-art devices. Finally, it outlines the challenges and opportunities in each field. In particular, we provide our perspectives on the future research directions of ZnS in energy and environment.

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Hue‐ and Chromaticity‐Based Exploration of Surface Complexation‐Induced Tunable Emission from Non‐Luminescent Quantum Dots

Roy

Pramanik

Mandal

et al. 2019

Chemistry An Asian Journal

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Herein we report the use of ah ue parameter of HSV (Hue, Saturation and Value) color space-in combination with chromaticity color coordinates-for exploring the complexation-induced luminescence color changes, ranging from blue to green to yellow to white, from a non-luminescent Fe-doped ZnS quantum dot (QD). Importantly,t he surface complexation reactionh elped ap resynthesized non-luminescent Fe-doped ZnS QD to glow with different luminescence colors (such as blue, cyan, green, greenish-yellow,y ellow) by virtue of the formation of various luminescenti norganic complexes (using different external organic ligands), while the simultaneous blue-and yellow-emitting complexf ormation on the surfaceo fn onluminescent Fe-doped ZnS QD led to the generation of white light emission, with ah ue mean value of 85 and a chromaticity of (0.28,0.33). Furthermore, the surface complexation-assisted incorporation of luminescence properties to an on-luminescent QD not only overcomest heir restricted luminescence-based applicationss uch as lightemitting, biological and sensing applications but also bring newer avenues towards unravelling the surface chemistry between QDs and inorganic complexes and the advantage of havinga ni norganic complex with QD for their aforementioned useful applications.Ascertaining the perfect color of al uminescent nanoscale material (such as quantum dot;Q D) plays an important role to define their unique optical characteristics and anticipated luminescenceb ased usagesi nl ight emitting devices (LEDs), bioimaging and optical sensing. [1] Incidentally,t he different color spaces, such as xy chromaticity (CIE xyY), linear-light tristimulus (CIE XYZ, RGB), perceptually uniform (CIE L*u*v*; CIE L*a*b*, nonlinearR 'G'B')a nd hue oriented (Hue, Saturation and Value; HSV), have demonstrated their use in describing the emission properties andn umerous color-based applicationso fQ Ds. [1] Amongt he mentioned four color spaces, HSV is commonly used as ac ylindrical colour-spaceindigitalimaging.I mportantly,t he numerical representation of the spectral color (circular part of the cylinder),d egree to which as ingle channel dominates (radius of the cylinder) andb rightness (height of the cylinder) are identified by their hue (H), saturation( S) and value (V) coordinates, correspondingly. [1] The equations for calculating H, S, and VofH SV color space are given below: [1] HInterestingly, the hue parameter of HSV color space is essential to define their use as an analytical tool for the detection of mechanical strain in polymers, ion sensing, identification of edible oils, pH sensing,n anopalsmonics and naked-eye DNA detection. [1] For example, Hakonen et al. showed the use of hue parameter for the sensing of pH and also demonstrated their superiority compared to ratiometrica nd single wavelength-intensity based pH sensing. [1c] Furthermore, Hakonen et al. also demonstrated the investigation of edible oils-based on the collection and comparing their mean hue values. [1d] Thus, the high precision ability and ...

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Surface Complexation-Based Biocompatible Magnetofluorescent Nanoprobe for Targeted Cellular Imaging

Cited by 26 publications

References 32 publications

Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Hue‐ and Chromaticity‐Based Exploration of Surface Complexation‐Induced Tunable Emission from Non‐Luminescent Quantum Dots

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