Surface Cleaning of 4H-SiC Using Hydrogen Plasma

Abstract

In order to improve the channel elecron mobility and decrease the surface roughness of SiC ,we have cleaned the SiC surfacre by hydrogen plasma with ECR–PEMOCVD plasma system. The surfaces were investigated by RHEED and X-ray Photoelectron Spectroscopy before and after hydrogen plasma cleanging. It indicated that the Si oxide content of SiC surface cleaned by hydrogen plasma for 18minutes is significantly higher than for 12 minutes and the SiC surface cleaned for 12 minutes at 200°C with ECR–PEMOCVD plasma system is the most smooth. The hydrogen plasma cleaning technology is very useful to improve the channel elecron mobility of MOS device.