2012
DOI: 10.1021/la301642w
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Surface Chemistry, Reactivity, and Pore Structure of Porous Silicon Oxidized by Various Methods

Abstract: Oxidation is the most commonly used method of passivating porous silicon (PSi) surfaces against unwanted reactions with guest molecules and temporal changes during storage or use. In the present study, several oxidation methods were compared in order to find optimal methods able to generate inert surfaces free of reactive hydrides but would cause minimal changes in the pore structure of PSi. The studied methods included thermal oxidations, liquid-phase oxidations, annealings, and their combinations. The surfac… Show more

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Cited by 84 publications
(64 citation statements)
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References 44 publications
(82 reference statements)
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“…Chemical reactivity of porous silicon has been ascribed to hydrides associated with the surfaces of the particles (12,21). These hydride surfaces reduce Resazurin (blue), a marginally fluorescent dye, to pink Resorufin which is highly fluorescent.…”
Section: Dye Based Reactivity Assaymentioning
confidence: 99%
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“…Chemical reactivity of porous silicon has been ascribed to hydrides associated with the surfaces of the particles (12,21). These hydride surfaces reduce Resazurin (blue), a marginally fluorescent dye, to pink Resorufin which is highly fluorescent.…”
Section: Dye Based Reactivity Assaymentioning
confidence: 99%
“…Biodegradable semiconducting silicon degrades into orthosilicic acid in vivo, which is naturally present in the human body [19], but can also release trace levels of silane [20] and can contain residual silicon-hydride bonds after thermal passivation (oxidation) treatments (21). If insufficient post-etch rinsing and drying is carried out the material can also contain sufficient HF-based electrolyte, solvent residues and etch by-products to cause cytotoxicity and reactivity [22].…”
Section: Introductionmentioning
confidence: 99%
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“…This decrease is attributed to the volume expansion of the material during oxidation. [ 55 ] Conventional thermal oxidization of PSi is carried out at 500-900 °C for durations of several minutes to an hour, [ 11,52,[56][57][58][59] primarily to improve the nanostructure stability in aqueous media. Oxidation at temperatures higher than 1000 °C leads to structural deterioration of the porous layer, accompanied by drastic decrease in the surface area and transition of the elongated columns into closed sphere-like pores; [60][61][62] thus unsuitable for biosensing applications.…”
Section: Fabrication and Functionalization Of Oxidized Psimentioning
confidence: 99%
“…Salonen (Salonen et al 1999b) Reactivity in solution IMC Salonen (Salonen et al 1997a(Salonen et al , 2001), Riikonen (Riikonen et al 2012 Plummer (Plummer et al 2008), Becker (Becker et al 2010) fraction of the drug in the sample can be calculated relatively accurate (Salonen et al 2005a). This makes the combination of TG and DSC a fast and simple method to estimate the amount and physical state of the drug loaded.…”
Section: Calorimetry In Porous Silicon Researchmentioning
confidence: 99%