Surface chemistry on semiconductors studied by molecular-beam reactive scattering

Yu, Ming L.; DeLouise, Lisa A.

doi:10.1016/0167-5729(94)90003-5

Cited by 100 publications

(55 citation statements)

References 469 publications

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“…40 With increasing incident energy, the initial sticking probability rapidly decreased. This trend is similar to that observed for Si oxidation 26,27,30 and is clear proof of the trapping-mediated dissociation process. The presence of the trapping-mediated process has been recently predicted by DFT calculations considering the spin-triplet ground state of oxygen.…”

Section: Resultssupporting

confidence: 71%

“…In general, hyperthermal energetic O 2 is a candidate to promote oxygen chemisorption and form unique oxide structures. 30,31 In fact, we previously demonstrated the usefulness of experiments using synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) in conjunction with supersonic O 2 beams to clarify oxide structures depending on E t . 26,32 Thus, we believe that supersonic O 2 beams could possibly facilitate novel oxidation at Ge surfaces and select the chemical compositions of Ge oxides via a novel reaction pathway.…”

Section: Introductionmentioning

confidence: 99%

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In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Yoshigoe

Teraoka

Okada

et al. 2014

The Journal of Chemical Physics

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In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 × 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved with only pure oxygen (O2) gas, which is in strong contrast to Si surfaces. Two types of dissociative adsorption, trapping-mediated and direct dissociation, were confirmed by oxygen uptake measurements depending on the incident energy of O2. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge2+ and a higher final oxygen coverage. We demonstrated that hyperthermal O2 beams remarkably promote the room-temperature oxidation with novel atomic configurations of oxides at the Ge(100) surface. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.

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Section: Resultssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Yoshigoe

Teraoka

Okada

et al. 2014

The Journal of Chemical Physics

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“…To study the etching of GaAs by Cl 2 , for example, a beam of Cl 2 is focused onto a GaAs surface and the unreacted Cl 2 flux, as well as the flux of the various reaction products (e.g. GaCl x , AsCl x , As x ), is collected to determine sticking coefficients, branching ratios for the various products, and etch rates (41).…”

Section: Chlorinementioning

confidence: 99%

“…For example, core-level spectroscopies, such as soft X-ray photoelectron spectroscopy (SXPS), are used extensively in investigating the chemistry of halogen-semiconductor reactions, since bonding to halogens induces large, easily detectable chemical shifts in the binding energies of the substrate core electrons (76). Reactive molecular beam scattering has also been applied successfully to these systems, as halogen-semiconductor reactions typically generate a variety of volatile products (41).…”

Section: Introductionmentioning

confidence: 99%

“…Because of the technological importance of these processes, many studies (only some of which are listed here) have looked at how ion beams and plasmas (32)(33)(34)(35)(36)(37), as well as the individual constituents of plasmas [e.g. ions , atoms (38)(39)(40)(41), radicals (26,(42)(43)(44)(45), hot molecules (46,47), electrons (48)(49)(50)(51)(52)(53)(54)(55), and photons (56)(57)(58)(59)(60)(61)(62)(63)(64)(65)(66)(67)(68)(69)], act to etch semiconductor substrates.…”

Section: Introductionmentioning

confidence: 99%

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Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

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It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF 2 , Cl 2 , Br 2 , and I 2 ) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.

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Transient Techniques: Temporal Analysis of Products and Steady State Isotopic Transient Kinetic Analysis

Efstathiou¹,

Gleaves²,

Yablonsky³

2012

Characterization of Solid Materials and Heterogeneous Catalysts

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Surface chemistry on semiconductors studied by molecular-beam reactive scattering

Cited by 100 publications

References 469 publications

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Transient Techniques: Temporal Analysis of Products and Steady State Isotopic Transient Kinetic Analysis

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