Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry
Pamburayi Mpofu,
Houyem Hafdi,
Pentti Niiranen
et al.
Abstract:Aluminum nitride (AlN) is a semiconductor with a very wide band gap and a potential dielectric material. Deposition of thin AlN films is routinely done by several techniques, including atomic...
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