1990
DOI: 10.1080/15421409008047468
|View full text |Cite
|
Sign up to set email alerts
|

Surface Chemistries and Photoelectrochemistries of Thin Film Molecular Semiconductor Materials

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

6
31
0

Year Published

1990
1990
2014
2014

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(37 citation statements)
references
References 21 publications
6
31
0
Order By: Relevance
“…28 One should note that this discussion is based on the time scale of our measurements (<1 ns) and may not correlate well with direct device or longer time measurements. However, the proposed active region thickness is on the same order of magnitude as that found in earlier reported device results, which also suggested a 5-10 nm active region at the interface 2,33,[39][40][41] or a very small (6-10 nm) exciton diffusion length. 2,16,39 However, the active region thickness may also depend on the fabrication details of the layers, as suggested by Shevaleevskiy et al 42 A demonstration of possible correlation between the TRTS measurements to device measurements may be obtained for transient data extending out to 0.5 ns.…”
Section: 3637supporting
confidence: 80%
See 1 more Smart Citation
“…28 One should note that this discussion is based on the time scale of our measurements (<1 ns) and may not correlate well with direct device or longer time measurements. However, the proposed active region thickness is on the same order of magnitude as that found in earlier reported device results, which also suggested a 5-10 nm active region at the interface 2,33,[39][40][41] or a very small (6-10 nm) exciton diffusion length. 2,16,39 However, the active region thickness may also depend on the fabrication details of the layers, as suggested by Shevaleevskiy et al 42 A demonstration of possible correlation between the TRTS measurements to device measurements may be obtained for transient data extending out to 0.5 ns.…”
Section: 3637supporting
confidence: 80%
“…These results agree with the reported high binding energies for ZnPc and other small organic films. 2,[32][33][34][35] In addition, exciton diffusion in both the ZnPc and the C 60 bulk layers must be either very slow or nonexistent within the measured time frame (<50 ps) because the differential transmission signal level appears to depend linearly on the interfacial number, and significant deviation from this effect is not observed (see next section).…”
Section: Resultsmentioning
confidence: 99%
“…In thicker films, excitons which are generated deep in the bulk recombine before reaching an interface and consequently lead to a decrease in the photocurrent yield. [44] However, the situation is quite different in the foam structure films. The porous structures in the PANI foam films increase the specific surface area, creating many interfaces between PANI foams and the electrolyte, which increases the pathways to the ITO contact, which benefits the charge separation significantly.…”
Section: à2mentioning
confidence: 98%
“…In thicker films, excitons generated deep in the bulk recombine before reaching an interface; consequently, the photocurrent yield decreases. [28] However, the situation is quite different in the ordered structure of the honeycomb film. The porous structures in the PDTG film increase the specific surface area, create many PDTG/electrolyte interfaces and add voids/pathways for electrolyte to contact ITO, which is beneficial for charge separation, so that h d is enhanced.…”
Section: à2mentioning
confidence: 99%