Surface chemical treatment effect on (1 1 1) PbSnTe &lt; In &gt; Topological crystalline insulator films

Tarasov, Andrey S.; Ishchenko, D. V.; Akhundov, I. O.; Golyashov, V. A.; Климов, А. Э.; Suprun, S. P.; Fedosenko, E. V.; Sherstyakova, V. N.; Рыбкин, А. Г.; Vilkov, O. Yu.; Tereshchenko, O. E.

doi:10.1016/j.apsusc.2021.150930

Cited by 8 publications

(7 citation statements)

References 30 publications

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“…Although the photoemission intensity at the 280–290 eV binding energies is mainly due to the Se LMM Auger peak, the carbon C 1s photoemission line is observable at all of the points. The C 1s binding energy in the points p1 and p2 is close to the 284.6 eV and can be related to the photoemission from the graphene film at the BS/G/SiO 2 interface, or probably, graphene plates washed away from the substrate and redeposited onto the BS film surface during the treatment in HCl-iPA (Figure ).…”

Section: Resultsmentioning

confidence: 77%

“…The (0001) surface of the Bi 2 Se 3 single crystal was prepared by cleaving the crystal with adhesive tape in the XPS system load-lock chamber at a pressure of <5 × 10 –7 mbar. The surface of BS/G structures was prepared by chemical treatment in isopropanol saturated with hydrochloric acid vapors (HCl-iPA) using the procedure described in refs , for A3B5 compounds and recently reported to be effective also for Pb 1– x Sn x Te: (i) treatment of the sample in HCl-iPA solution for 10 s with stirring; (ii) rinsing the sample in pure isopropanol for 30 s with stirring; (iii) immediately drying the sample by pumping down in the XPS system load-lock chamber; and (iv) annealing for 20 min at 170 °C in the XPS system preparation chamber at a pressure of <5 × 10 –10 mbar.…”

Section: Preparation Of Samples and Methods Of Characterizationmentioning

confidence: 99%

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Bi₂Se₃ Nanolayer Growth on 2D Printed Graphene

Antonova

Кох

Nebogatikova

et al. 2022

Crystal Growth & Design

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We studied Bi2Se3 films grown by vapor deposition at 500 °C on layers of printed graphene (the low-cost variant of multigraphene film). Using two-dimensional (2D)-printed graphene to manage the configuration of selective growth of Bi2Se3 films, in combination with capillary effect conditions, makes it possible to form continuous films with a thickness of 8 nm or more and crystallites several times larger than those grown without using the capillary effect. For Bi2Se3 films with a thickness of 20–30 nm, the sheet resistance is 1–3 kΩ/sq, the carrier density is ∼ (2–4) × 1012 cm–2, and the electron mobility at room temperature is 1100–2400 cm2/Vs. The properties of layers grown on a printed graphene film are close to those obtained in the case of growth under the same conditions on CVD graphene. If the printed graphene layer contains residual organic additives, two-layer Bi2Se3/Bi2SeO2/G heterostructures with a conductivity of 0.3–0.9 kΩ/sq and the similar values of carrier mobility are formed at the same growth regime. Heterostructures of Bi2Se3/G and Bi2Se3/Bi2SeO2 are promising for the formation of conducting layers with high charge carrier mobility and transparent electrodes for the IR range, as well as for efficient conversion of solar energy and other electronic and optical applications

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Section: Resultsmentioning

confidence: 77%

Section: Preparation Of Samples and Methods Of Characterizationmentioning

confidence: 99%

Bi₂Se₃ Nanolayer Growth on 2D Printed Graphene

Antonova

Кох

Nebogatikova

et al. 2022

Crystal Growth & Design

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“…The stoichiometric ratios of Bi, Sb, Te, and Se at the sample surface were calculated using the Bi 5d, Sb 4d, Te 4d, and Se 3d XPS peak areas, Scofield’s photoionization cross-sections, and TPP-2M inelastic mean free path values, accounting for photoemission asymmetry factors . To obtain an atomically clean and structurally ordered film surface for studying the electronic structure by ARPES, the samples were additionally prepared according to the procedure described in and consisted of four steps: (1) treatment in isopropanol (iPA) saturated with HCl vapor for 10 s; (2) washing in pure iPA for 30 s; (3) drying during pre-pumping in the photoemission system loadlock chamber; and (4) annealing in ultra-high vacuum (<5 × 10 –10 mbar) at 210 °C for 20 min.…”

Section: Experimental Methodsmentioning

confidence: 99%

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Stepina

Ishchenko

Golyashov

et al. 2022

Crystal Growth & Design

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Bi y Sb2–y Te3–x Se x (BSTS) topological insulator (TI) thin films were grown by physical vapor deposition (PVD) and molecular-beam epitaxy (MBE) and compared by growth parameters, substrate selection, preparation, and resulting film properties. For the MBE-grown BSTS on Si(111)-(7 × 7), preliminary deposition of the Bi2Te3 buffer layer at the Te-rich growth condition was found to improve the film structural properties. Using a BSTS crystal as the main source for deposition allows us to significantly decrease the molecular Te flux. For the PVD growth, optimal conditions (gas flux, source, and substrate temperatures) were found for a morphologically smooth BSTS film on mica. In order to grow the epitaxial BSTS film on a Si/SiO2 substrate, graphene was successfully used as the pre-epitaxial layer. A newly developed chemical preparation method of atomically clean and structurally ordered epi-layer surfaces allowed us to study the electronic structure of the grown TI films without using capping layers. The surface states with Dirac-like dispersion at the Γ-point in the surface Brillouin zone were detected by angle-resolved photoelectron spectroscopy. Photoemission measurements showed a change in the surface Fermi level position depending on the composition of BSTS films. The magnetoconductivity data demonstrated a strong dependence of the parameters describing a weak antilocalization on the substrate used.

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“…Таким образом, химическая обработка плёнок Pb 1-x Sn x Te (111) в растворе HCl-iPA удаляет с поверхности собственные оксиды и загрязнения и обогащает поверхность элементным теллуром. Дальнейший прогрев в вакууме приводит к десорбции элементного теллура, обогащению поверхности оловом и образованию атомарно-чистой и структурно-упорядоченной поверхности Pb 1-x Sn x Te (111)-(1×1), пригодной для дальнейшего научного или промышленного использования [7].…”

Section: оптический детектор спина свободных электронов на основе пол...unclassified

ГЛАВА 8. Спин-Зависимые ЯВЛЕНИЯ В ПОЛУПРОВОДНИКОВЫХ ГЕТЕРОСТРУКТУРАХ А3В5и А4В6

2023

Квантовые Структуры Для Посткремниевой Электроники

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Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films

Cited by 8 publications

References 30 publications

Bi₂Se₃ Nanolayer Growth on 2D Printed Graphene

Bi₂Se₃ Nanolayer Growth on 2D Printed Graphene

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

ГЛАВА 8. Спин-Зависимые ЯВЛЕНИЯ В ПОЛУПРОВОДНИКОВЫХ ГЕТЕРОСТРУКТУРАХ А3В5и А4В6

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Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films

Cited by 8 publications

References 30 publications

Bi2Se3 Nanolayer Growth on 2D Printed Graphene

Bi2Se3 Nanolayer Growth on 2D Printed Graphene

Epitaxial Growth of the BiySb2–yTe3–xSex 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

ГЛАВА 8. Спин-Зависимые ЯВЛЕНИЯ В ПОЛУПРОВОДНИКОВЫХ ГЕТЕРОСТРУКТУРАХ А3В5и А4В6

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Product

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Bi₂Se₃ Nanolayer Growth on 2D Printed Graphene

Bi₂Se₃ Nanolayer Growth on 2D Printed Graphene

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy