Surface charge limit in NEA superlattice photocathodes of polarized electron source

Togawa, Kazuaki; Nakanishi, Toru; Baba, Takanobu; Furuta, F.; Horinaka, Hiromichi; Ida, Takahiro; Kurihara, Y.; Matsumoto, Hiroshi; Matsuyama, Tomohiro; Mizuta, Masahiro; Okumi, Shoji; Omori, T.; Suzuki, C.; Takeuchi, Y.; Wada, Kenji; Yoshioka, M.

doi:10.1016/s0168-9002(98)00552-x

Cited by 66 publications

(12 citation statements)

References 21 publications

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“…The structures are p-doped using a high-gradient doping technique, consisting of a thin (10 nm), very highly doped (5 × 10 19 cm −3 ) surface layer with a lower density doping (5 × 10 17 cm −3 ) in the remaining active layer(s). A high-surface doping density is necessary to achieve high QE while reducing the surface-charge-limit problem [66,67]. A lower doping density is used to maximize the polarization [68].…”

Section: Beam Parametersmentioning

confidence: 99%

The International Linear Collider Technical Design Report - Volume 3.II: Accelerator Baseline Design

Adolphsen

2013

105

135

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Section: Beam Parametersmentioning

confidence: 99%

The International Linear Collider Technical Design Report - Volume 3.II: Accelerator Baseline Design

Adolphsen

2013

105

135

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“…The results of photoelectron emission experiments were used to elucidate (1) and (2), which led to a comparison of diamond PN and PIN junction diode electron emitters with NEA. Results of research on deep ultraviolet-light emitting diodes with diamond PIN junctions was introduced to develop a new structural scheme (3) to overcome the low carrier density at room temperature that results from the deep donor/acceptor levels of diamond, which have never previously been considered in conventional semiconductors.…”

Section: Resultsmentioning

confidence: 99%

“…The effective NEA devices have been well developed as photocathodes in high energy accelerator research fields [3]. GaAs/GaAsP super-lattice with effective NEA photocathodes were also developed for spin-polarized electron source applications [4].…”

mentioning

confidence: 99%

Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch

Takeuchi

Koizumi

2014

Topics in Applied Physics

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This chapter reviews the electron emission properties of hydrogen terminated diamond surfaces with a "true" negative electron affinity (NEA), and presents the recent development of electron emitters based on diamond PN and PIN junctions, that could apply to a high voltage vacuum power switch. The background to this topic, including the emission mechanism with free excitons, and carrier injection with a hopping conduction, is also introduced.

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“…Preparation of an NEA surface is carried out by alternately depositing cesium and oxygen (Yo-Yo technique) [9].…”

Section: B Measurement System and Nea Preparationmentioning

confidence: 99%

Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface

Ichihashi

Shimura

Nishitani

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band.Index Terms -intermediate-band solar cells, negative electron affinity surface, photoelectron spectroscopy, III-V compound semiconductor.

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Surface charge limit in NEA superlattice photocathodes of polarized electron source

Cited by 66 publications

References 21 publications

The International Linear Collider Technical Design Report - Volume 3.II: Accelerator Baseline Design

The International Linear Collider Technical Design Report - Volume 3.II: Accelerator Baseline Design

Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch

Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface

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