Surface characterization of transparent conductive oxide Al-doped ZnO films

Chen, M.; Pei, Zhibin; Sun, Cheng; Wen, Liping; Wang, X.

doi:10.1016/s0022-0248(00)00834-4

Cited by 232 publications

(117 citation statements)

References 19 publications

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“…The residual stress (σ) of the thin films can be determined from a biaxial strain model analysis [32]. Accordingly, the lattice parameters and elastic stiffness constants of the single crystal ZnO are related in the following formula: [33].…”

Section: Resultsmentioning

confidence: 99%

Influence of Low Ag Doping on Structural, Morphological and Optical Properties of Sol-Gel Dip-Coated Nanostructured ZNO Thin Films

Dehimi

Touam

Chelouche

et al. 2016

International Journal of Natural Sciences Research

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In the present study, a sol-gel dip-coating process was used to deposit almost stress free highly c-axis oriented nanostructured ZnO thin films on glass substrates. The effects of low silver doping concentration (Ag ˂ 1 at.%) on the structural, morphological and optical properties of such films were investigated using different characterization techniques. X-ray diffraction (XRD) measurements Contribution/ OriginalityThis study is one of very few studies which have investigated the preparation of low Agdoped ZnO thin films by the sol-gel dip-coating technique. It was put into evidence that incorporation of low Ag concentrations (Ag ˂ 1 at.%) in ZnO can indeed improve its physical properties. 2016 Vol. 4, No. 1, pp. 15-28 ISSN(e): 2311-4746 ISSN(p): 2311-7435 DOI: 10.18488/journal.63/2016 International Journal of Natural Sciences Research INTRODUCTIONIn recent years, zinc oxide (ZnO) has emerged as a promising material for a large number of fundamental and applied fields due to its numerous interesting characteristics including direct wide band gap (3.37 eV) semiconductor with a large excitation binding energy (60 meV [18]. Among these approaches, the sol-gel process has attracted large attentions due to its simplicity, low cost, easy adjusting composition and dopants, homogeneity on the molecular level and lower crystallization temperature.ZnO doping with selective elements is the most effective alternative to improve its structural, electrical, magnetic, and optical properties without any change in the crystalline structure [19]; [20]. Among these elements, Ag has been one of the most extensively used dopants whose effects on ZnO thin film properties have been widely investigated [17] [30]. Furthermore, only moderate or high Ag doping levels where studied. In this context, we complete and enrich our understanding of Ag doped ZnO films via the investigation of the influence of low Ag doping concentrations (Ag ˂ 1 at.%) on ZnO thin films properties. In the present work, ZnO thin films have been deposited onto glass substrates using a sol-gel dip-coating process. A systematic study was conducted to reveal the effect of low silver doping concentration on the structural, morphological and optical properties by using various characterization techniques.

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Section: Resultsmentioning

confidence: 99%

Influence of Low Ag Doping on Structural, Morphological and Optical Properties of Sol-Gel Dip-Coated Nanostructured ZNO Thin Films

Dehimi

Touam

Chelouche

et al. 2016

International Journal of Natural Sciences Research

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“…The low binding energy component (OI) is from the O2-ions wurtzite structure of the hexagonal Zn2+ ion array, surrounded by Zn (or the substitution of Ga) atoms [11]. The component on the low binding energy (OI) side of the O1s spectrum at 529.77 eV can be attributed to O2-ions surrounding surrounded by the Zn, Ga, and Ag in the atoms [12]. The density of this component is a measure of the number of oxygen atoms in a fully oxidized stoichiometric atmosphere.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Optical Properties of Ga-doped and Ag-doped ZnO Nanowire Measured at Low Temperature

Lee

2014

Transactions on Electrical and Electronic Materials

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Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hotwalled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several μm, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donorbound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

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“…4. Earlier investigations stated that the binding energy of oxygen 1s (O 1s) located at near 532.30 eV usually originates from the presence of loosely bound oxygen on the surface of IZO film belonging to a specific specie, e.g., -CO 3 or adsorbed H 2 O or adsorbed O 2 (22)(23)(24)(25)(26)(27)(28). The binding energy at 531.51 eV is associated with O 2− ions that are in oxygen deficient regions of the IZO film.…”

Section: Ecs Transactions 41 (6) 265-271 (2011)mentioning

confidence: 99%

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors

Chung¹,

Chang

Li³

et al. 2011

ECS Trans.

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This work shows the effects of post-deposition annealing atmosphere and duration on the properties of sol-gel derived amorphous indium zinc oxide thin film transistors (a-IZO TFTs). Two different post-deposition annealing atmospheres, nitrogen and oxygen, were used in this study. Experimental results showed that the O 2 -annealed devices showed better electrical characteristics than the N 2 -annealed samples. Under O 2 -annealing, field effect mobility was enhanced to 1.47 cm 2 /V s, the threshold voltage increased to -4.61 V and the subthreshold swing improved to 0.86 V/dec. Also, the transfer characteristics of a-IZO TFTs improve with annealing time. X-ray photoelectron spectroscopy (XPS) analysis indicated that the chemical composition of the IZO film was modified by the oxygen annealing.

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Surface characterization of transparent conductive oxide Al-doped ZnO films

Cited by 232 publications

References 19 publications

Influence of Low Ag Doping on Structural, Morphological and Optical Properties of Sol-Gel Dip-Coated Nanostructured ZNO Thin Films

Influence of Low Ag Doping on Structural, Morphological and Optical Properties of Sol-Gel Dip-Coated Nanostructured ZNO Thin Films

Comparison of Optical Properties of Ga-doped and Ag-doped ZnO Nanowire Measured at Low Temperature

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors

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