Surface and volume decay processes in semiconductors studied by contactless transient photoconductivity measurements

Kunst, M.; Müller, G.; Schmidt, Roland; Wetzel, H.

doi:10.1007/bf00615912

Cited by 28 publications

(23 citation statements)

References 11 publications

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“…Experiments show that separation of surface recombination from volume recombination by the use of different excitation wavelengths [36] (cf. Section 4.2) does not work [35]. If also invasive changes of samples are allowed (different thicknesses or passivating surface layers) the situation becomes hardly better: -For low τ v samples (such as, for example, mc-Si in Section 5B) surface and volume recombination can be separated, in fact even for an untreated wafer, but only for an extreme value of the surface recombination.…”

Section: P-type Multicrystalline-silicon (P Mc-si) 521 the Determinmentioning

confidence: 94%

“…(18) numerically where also the time profile of the excitation can be taken into account [35], an interesting conclusion can be drawn from the analytical solution [36]:…”

Section: Ambipolar Diffusionmentioning

confidence: 99%

“…Three procedures are available [35,36]: -The simplest one (corresponding to the purposes b1-b3 in the previous Section 4.1): The interest lies only in the change of surface (volume) recombination by a surface (volume) treatment. Then, the change of ∆P is only due to this change and this change can be optimized.…”

Section: Evaluation Of the Experimentsmentioning

confidence: 99%

“…The problem is that surface excitation generates a high excess charge-carrier concentration. If the surface recombination velocity depends on the injection level (as is normally the case), this makes comparison difficult [35].…”

Section: Evaluation Of the Experimentsmentioning

confidence: 99%

“…Section 3.2) with as the initial condition the time profile of the laser pulse (g(x)) [35]. For evaluation of PC data with the simple kinetic model the solution of Eq.…”

Section: Ambipolar Diffusionmentioning

confidence: 99%

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The determination of charge‐carrier lifetime in silicon

Klein

Wuensch

Kunst³

2008

Physica Status Solidi (b)

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In this study, we report on a novel composite membrane system for pH‐responsive controlled release, which is composed of a porous membrane with linear grafted, positively pH‐responsive polymeric gates acting as functional valves, and a crosslinked, negatively pH‐responsive hydrogel inside the reservoir working as a functional pumping element. The proposed system features a large responsive release rate that goes effectively beyond the limit of concentration‐driven diffusion due to the pumping effects of the negatively pH‐responsive hydrogel inside the reservoir. The pH‐responsive gating membranes were prepared by grafting poly(methacrylic acid) (PMAA) linear chains onto porous polyvinylidene fluoride (PVDF) membrane substrates using a plasma‐graft pore‐filling polymerization, and the crosslinked poly(N,N‐dimethylaminoethyl methacrylate) (PDM) hydrogels were synthesized by free radical polymerization. The volume phase‐transition characteristics of PMAA and PDM were opposite. The proposed system opens new doors for pH‐responsive “smart” or “intelligent” controlled‐release systems, which are highly attractive for drug‐delivery systems, chemical carriers, sensors, and so on.

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Section: P-type Multicrystalline-silicon (P Mc-si) 521 the Determinmentioning

confidence: 94%

“…(18) numerically where also the time profile of the excitation can be taken into account [35], an interesting conclusion can be drawn from the analytical solution [36]:…”

Section: Ambipolar Diffusionmentioning

confidence: 99%

Section: Evaluation Of the Experimentsmentioning

confidence: 99%

Section: Evaluation Of the Experimentsmentioning

confidence: 99%

“…Section 3.2) with as the initial condition the time profile of the laser pulse (g(x)) [35]. For evaluation of PC data with the simple kinetic model the solution of Eq.…”

Section: Ambipolar Diffusionmentioning

confidence: 99%

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The determination of charge‐carrier lifetime in silicon

Klein

Wuensch

Kunst³

2008

Physica Status Solidi (b)

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The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon

Moreno

Kunst

2010

Physica Status Solidi (b)

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Excess charge carrier kinetics in p-doped crystalline silicon (Si) wafers covered by SiO 2 films is investigated by transient photoconductance and surface photovoltage measurements. This makes it possible to distinguish between excess charge carriers collected in the Si/SiO 2 heterojunction and those in the Si volume. The decay of the photoconductance signal in the millisecond time range could be unambiguously attributed to excess charge carriers stored in the space charge region. The decay of these charge carriers appears to be independent of the volume lifetime. The difference between the behaviours in Si/ SiO 2 and Si/SiN x is discussed.

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