Surface and sensing properties of PE-ALD SnO2 thin film

Lee, W.; Hong, Kim Jae; Park, Y.; Kim, Nam–Hoon; Choi, Young-Soo; Park, J.

doi:10.1049/el:20058174

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…23 SnO 2 films have also been deposited previously using plasma assisted ALD. [24][25][26] However, this method suffers from the disadvantage that the plasma species are highly reactive and do not allow conformal coatings at very high aspect ratios.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Elam

Baker

Hryn

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

169

162

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The authors present a new method for preparing thin films of SnO 2 by atomic layer deposition ͑ALD͒ using alternating exposures to tetrakis͑dimethylamino͒ tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, SnCl 4. Tin oxide films were successfully deposited on a variety of substrates using deposition temperatures of 50-300°C at an average growth rate of 1.2 Å / cycle. They use in situ quartz crystal microbalance and quadrupole mass spectrometry measurements to explore the mechanism for SnO 2 ALD. Scanning electron microscopy of SnO 2 films deposited on Si͑100͒ show that the SnO 2 films are smooth, conformal, and nearly featureless, while atomic force microscopy yields a surface roughness of only 0.84 nm for a film with a thickness of 92 nm. X-ray diffraction reveals that the SnO 2 films are amorphous. Films deposited on glass yielded a resistivity of ϳ0.3 ⍀ cm and an optical transmission of 94% for a film thickness of 140 nm. X-ray photoelectron spectroscopy measurements were consistent with residual dimethylamine ligands remaining in the film at deposition temperatures below 150°C. This method allows, for the first time, low temperature ͑50°C͒ growth of SnO 2 films by ALD. Additionally, they show that this process is suitable for conformally coating high aspect ratio anodic alumina membranes.

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Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Elam

Baker

Hryn

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

169

162

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“…Di-butyltin(IV) diacetate ([(CH 3 CO 2 ) 2 Sn((CH 2 ) 3 –CH 3 ) 2 ]) is a heteroleptic alternative that is commonly used for the deposition of SnO 2 thin films. However, the suitability for low-temperature PEALD has not been proven yet and the reported deposition temperatures are in a range of 200–400 °C whereas the detailed studies in terms of typical ALD characteristics have not been reported either. , The homoleptic amide precursors, including tetrakis-dimethyl-amido tin(IV) ([Sn(NMe 2 ) 4 ]) and tetrakis-ethylmethyl-amido tin(IV) ([Sn(NEtMe) 4 ]), are highly reactive compounds wherein the reactivity is sufficient enough for thermal ALD including water as co-reactant . In PEALD, depositions with high growth rates of 1.7 Å cycle –1 ([Sn(NMe 2 ) 4 ]) and 1.2 Å cycle –1 ([Sn(NEtMe) 4 ]) have been reported recently at low deposition temperatures of 50 and 70 °C, respectively.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO₂-Based Thin-Film Transistor Devices

Mai

Zanders

Subaşı

et al. 2019

ACS Appl. Mater. Interfaces

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A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 °C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)4] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)4] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 Å cycle–1 at 150 and 60 °C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 °C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on/off ratio of 107 and field-effect mobility of μFE ≈ 12 cm2 V–1 s–1 for the as-deposited thin films deposited at such low temperatures.

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“…In particular, SnO 2 can be deposited from SnCl 4 reacting with either water (8)(9)(10)(11)(12) or hydrogen peroxide (13)(14)(15)(16)(17) or from Snl 4 and either H 2 O 2 (14,16) or O 2 (14,(16)(17)(18)(19) at relatively high temperatures (180-700 °C). In order to decrease the deposition temperature, to avoid corrosive by-products and further to obtain amorphous films, alternative strategies have been developed based on metalorganic precursor (20)(21)(22)(23)(24)(25)(26)(27)(28). For instance, Gordon et al reported a low temperature approach based on a cyclic amide precursor reacting with either hydrogen peroxide (29) or NO (30), from 50 to 200 ºC and 130 to 250 ºC, respectively.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Non-Aqueous Atomic Layer Deposition of SnO₂ for Gas Sensing Application

et al. 2018

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Tin dioxide thin films are grown at low-moderate temperature using a non-hydrolytic atomic layer deposition process. Granular SnO2 thin films are obtained from tin(IV) tetra-butoxide reacting with acetic acid, at temperatures as low as 75 °C. Influence of pulse length of both reactants and of the deposition temperature on the saturation is studied. A narrow ALD window is established between 150 and 175 °C with a growth per cycle of 0.07 nm and with a linear growth as a function of the number of cycles. Above 200 °C decomposition of the tin precursor is not negligible. Microstructure and morphology of the as-prepared films as well as the influence of the deposition parameters are investigated using electron and atomic force microscopies. The band gap of the obtained films is determined using UV-visible spectroscopy. Finally the use of the SnO2 coated carbon nanotubes as gas sensing layer is discussed.

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Surface and sensing properties of PE-ALD SnO2 thin film

Cited by 10 publications

References 9 publications

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO₂-Based Thin-Film Transistor Devices

(Invited) Non-Aqueous Atomic Layer Deposition of SnO₂ for Gas Sensing Application

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Surface and sensing properties of PE-ALD SnO2 thin film

Cited by 10 publications

References 9 publications

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices

(Invited) Non-Aqueous Atomic Layer Deposition of SnO2 for Gas Sensing Application

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Product

Resources

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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO₂-Based Thin-Film Transistor Devices

(Invited) Non-Aqueous Atomic Layer Deposition of SnO₂ for Gas Sensing Application