Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

Abstract

In this study thin Zr films (135 nm) were deposited on 6H-SiC substrate at room temperature by sputter deposition. ions/cm 2 . The samples were analysed before and after irradiation using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and secondary electron microscopy (SEM). The surface morphology from SEM analysis revealed a homogeneous Zr surface which did not vary with increasing fluences of irradiation. AFM analysis revealed that the R rms surface roughness did increase from the as-deposited value of 1.6 nm and then decrease at higher SHI irradiation fluences to 1.4 nm. RBS results indicate that interface mixing between Zr and SiC interface occurred and varied linearly with irradiation ion fluence. The value obtained for diffusivity of Zr shows that the mixing was due to interdiffusion across the interface during a transient melt phase according to the thermal spike model.

Irradiation effects of swift heavy ions on palladium films deposited on 6H-SiC substrate

“…The four properties of SiC which set it aside from other materials are: relatively high melting temperature, low neutron capture, high thermal conductivity and the size of its electronic band gap [2]. These properties enables SiC to be used as a structural material in nuclear reactors and in high power electronics [2][3][4][5].…”

Влияние Зарядового Состояния Ионов Ксенона На Профиль Распределения По Глубине При Имплантации В Кремний

“…В большинстве работ, посвященных многозарядным ионам, изучались потенциальная электронная эмиссия с поверхности, распыление мишеней, рассеяние ионов, зарядовое равновесие в процессе прохождения ионов через тонкую мишень [2][3][4][5][6]. Было проведено большое количество работ, связанных с образованием треков под действием быстрых многозарядных ионов, их влияние на структуру и состав мишени, создание трековых мембран [7][8][9][10].…”

Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

“…[22][23][24][25][26] In this paper, the stability between Zr layer and SiC substrate, initial temperature of reaction, interface reactions, surface topography, initial phases formation and phase evolution under vacuum annealing between 600 and 850 C were investigated by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), secondary electron microscopy (SEM) and atomic force microscopy (AFM). The ternary EHF model was applied and the initial phases to form in the Zr/SiC interface predicted and compared with the experimental results.…”