Surface and grain boundary scattering studied in beveled polycrystalline thin copper films

Zhang, Wenqi; Brongersma, Sywert; Clarysse, Trudo; Terzieva, Valentina; Rosseel, Erik; Vandervorst, Wilfried; Maex, Karen

doi:10.1116/1.1771666

Cited by 53 publications

(36 citation statements)

References 10 publications

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“…For example, with respect to the application of Cu wires to interconnections, we need to measure the grain boundary resistivity with a precision of 10 À1 , while the diameter of the wire is only 50 nm or even smaller than that. [5][6][7] Thus, it is particularly important to develop a method that allows a precise resistivity measurement for a local area.…”

Section: Introductionmentioning

confidence: 99%

Precise Resistivity Measurement of Submicrometer-Sized Materials by Using TEM with Microprobes

et al. 2009

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Precise electric resistivity measurements of submicrometer-sized materials have been demonstrated by using the piezodriving mechanics of two microprobes in a transmission electron microscope. By introducing two supplemental copper cables connected to a specimen, an electric circuit similar to that used in the four-terminal method was realized in a specimen holder with two microprobes. By using the proposed method, we determined the resistivity of a needle-shaped Pt-Ir specimen, whose resistance is only of the order of 0.1 , with a satisfactory precision of <2 Â 10 À4 . This method can be employed in microscopy studies on many submicrometer-sized and/or nanometer-sized materials.

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Section: Introductionmentioning

confidence: 99%

Precise Resistivity Measurement of Submicrometer-Sized Materials by Using TEM with Microprobes

et al. 2009

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“…65 The size effect is a result of electron scattering at sidewalls and grain boundaries which generates an increase in resistivity. 66,67 This size effect can be reduced by increasing the grain size and reducing the Cu sidewall/surface roughness. However, increasing the grain size is difficult in Damascene processes due to both narrow feature geometries 68 and introduction of impurities during the CMP step.…”

mentioning

confidence: 99%

Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures

Choi

Hess

2014

ECS J. Solid State Sci. Technol.

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Copper, silver, and gold share unique properties that offer numerous application possibilities. For instance, low resistivity and high electromigration resistance make them attractive as interconnect layers in integrated circuits and microelectronic devices, while the optical properties of their nano-scale structures allow fabrication of plasmonic devices. Etching or patterning techniques are required in order to fabricate nano-structures, devices, and circuits. Although liquid or vapor phase techniques can be applied, plasma or glow discharge methods are typically invoked due to the need to generate anisotropic nanometer pattern sizes. Group 11 metals (Cu, Ag, and Au) form few volatile compounds at temperatures below 150 • C, which limits the approaches that can be used to perform etching/patterning. Halogenated plasmas are widely used to etch metal layers; however, the low volatility of Cu, Ag, and Au halides precludes low temperature processes. Group 11 metals form hydrides readily in plasmas containing hydrogen species. Despite the thermodynamic instability of these metal hydrides, they appear to form at low (below room) temperature and can be desorbed from the etching surface by ion-or photon-assisted processes. Similarly, methylated metal etch products can be generated with hydrocarbon etching plasmas. As a result, etch rates above 12 ± 1 nm/min can be achieved, even when polymer forming plasmas (e.g., methane or other hydrocarbons) are used for patterning. These simple subtractive plasma etching approaches offer significant advantages relative to other vapor phase or liquid techniques in the manufacture of nano-scale devices and circuits.

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“…Zhang et al [44] report a careful study of the electrical resistivity of electrodeposited copper. They conclude that the effects of grain boundaries are significant in raising the electrical resistivity of their films.…”

Section: Grain Structure and Texturementioning

confidence: 99%

“…Elastic constant Value, in units of GPa (or equivalently, 10 10 dynes/cm 2 ) C 11 86.75 C 12 6.87 C 44 57.86 C 14 17.96 C 13 11.3 C 33 106.8…”

Section: Epitaxial Filmsmentioning

confidence: 99%

“…Grain boundary scattering of electrons in very fine metal lines is now considered to have a serious deleterious effect on the electrical conductivity [44]. In the case of a nanocrystalline columnar grain Cu film, the in-plane grain size can be measured by means of atomic force microscopy (AFM), where grains can be resolved on the surface.…”

Section: Grain Structure and Texturementioning

confidence: 99%

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Thin Films for Microelectronics and Photonics: Physics, Mechanics, Characterization, and Reliability

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Volinsky

Micro- And Opto-Electronic Materials and Structures: Physics, Mechanics, Design, Reliability, Packaging

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Surface and grain boundary scattering studied in beveled polycrystalline thin copper films

Cited by 53 publications

References 10 publications

Precise Resistivity Measurement of Submicrometer-Sized Materials by Using TEM with Microprobes

Precise Resistivity Measurement of Submicrometer-Sized Materials by Using TEM with Microprobes

Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures

Thin Films for Microelectronics and Photonics: Physics, Mechanics, Characterization, and Reliability

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