2017
DOI: 10.1002/sia.6270
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Surface and buried interface layer studies on challenging structures as studied by ARXPS

Abstract: Previous extensive studies were performed at Surface Science Western on the treatment of III-V semiconductors to produce surfaces suitable for subsequent epitaxial growth. X-ray photoelectron spectroscopy (XPS) was used to study oxide formation and capping techniques, and to monitor changes that would occur upon thermal desorption. The effects of a remote plasma on these surfaces were studied as well as to apply thin dielectric films of Si 3 N 4 in order to study interfacial properties. Angleresolved XPS (ARXP… Show more

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Cited by 44 publications
(61 citation statements)
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References 26 publications
(34 reference statements)
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“…Spontaneous formation of an oxide skin on the surface of the metal helps to stabilize the resulting LM NPs. The oxide skin of gallium-based is composed primarily of gallium oxide 19,20 and the growth of the oxide could be controlled either through thiolation 21 or thermal oxidation 22 . While the thiolation mitigates (but not eliminates) the growth of the oxide skin, in thermal oxidation, the oxide skin grows thicker with increasing temperature, as expected.…”
Section: Introductionmentioning
confidence: 99%
“…Spontaneous formation of an oxide skin on the surface of the metal helps to stabilize the resulting LM NPs. The oxide skin of gallium-based is composed primarily of gallium oxide 19,20 and the growth of the oxide could be controlled either through thiolation 21 or thermal oxidation 22 . While the thiolation mitigates (but not eliminates) the growth of the oxide skin, in thermal oxidation, the oxide skin grows thicker with increasing temperature, as expected.…”
Section: Introductionmentioning
confidence: 99%
“…Oxidation, however, depends on stoichiometry, oxidant diffusion, reduction potential ( E 0 ), microstructure, cohesive energy density, atomic size, temperature, and pressure . In metallic alloys, the complexity of this oxidation process necessitates a kinetics‐driven differentiation and in situ self‐assembly across a thin (7–30 Å) interface . Selectively engineering this thin, complex, tangential, component(s) of a material is challenging due to entropic domination by the bulk …”
Section: Introductionmentioning
confidence: 99%
“…This initial stoichiometric dictated oxidation, kinetically self‐sorts based on E 0 , cohesive energy density, atomic size (hence diffusivity), and oxygen partial pressure . At t >0, the lowest E 0 element eventually dominates the exterior surface of the metal . For a eutectic (or other stable) alloy mixture, continued oxidation may perturb the bulk equilibrium composition as one (or more) of the components is selectively removed.…”
Section: Introductionmentioning
confidence: 99%
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