Surface analytical characterization of SiO2 gradient membrane coatings on gas sensor microarrays

Abstract

Ion beam assisted deposition is applied to cover a gas sensor microarray of an electronic nose with an ultrathin gas-permeable SiO2 membrane varying in thickness across the array. Auger electron spectroscopy sputter depth profiles and non-Rutherford backscattering spectroscopy were used to study the uniformity of the deposition and the subsequent annealing step. The combination of spectroscopic ellipsometry for the freshly prepared membranes and line scans derived from Auger and angle resolved x-ray photoelectron spectroscopy, respectively, for the baked membrane is presented as a powerful quantification method for the determination of the desired SiO2 membrane thickness profiles.

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“…In order to modify the film sensor properties over the microarray, a gas-permeable SiO 2 membrane with a gradually changed thickness (in this particular case, of approx. 2-10 nm) was deposited on the top of the film using ion beam assisted deposition technique [12,13].…”