Abstract:The miniaturization of devices requires the introduction of a high aspect ratio through patterning in the Damascene copper interconnect process. The high aspect ratio etch process employs hardmasks, such as amorphous carbon, that can withstand high-powered plasma exposure. When an etch hardmask is removed after patterning, the properties of the underlying film can be altered by the effect of plasma exposure during the strip process. In this study, surface properties of SiOC(H) are investigated after an amorpho… Show more
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