1996
DOI: 10.1016/s1359-0286(96)80063-5
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Surface analysis by laser ionization

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Cited by 5 publications
(2 citation statements)
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“…What may not be immediately obvious is that a significant ionization efficiency penalty is paid by transitioning from SPI to MPI. If MPI plays a significant role in the laser postionization mechanism, power densities exceeding 10 10 W/cm 2 are required for effective photoionization of sputtered neutrals (these densities can only be reached by pulsed lasers) [15].…”
Section: Pnnl-23935mentioning
confidence: 99%
“…What may not be immediately obvious is that a significant ionization efficiency penalty is paid by transitioning from SPI to MPI. If MPI plays a significant role in the laser postionization mechanism, power densities exceeding 10 10 W/cm 2 are required for effective photoionization of sputtered neutrals (these densities can only be reached by pulsed lasers) [15].…”
Section: Pnnl-23935mentioning
confidence: 99%
“…For quantitative surface and material analysis, Becker and He et al [19][20][21][22] have studied some gases (Ar, Kr, NO, Xe, N 2 , and O 2 ) and solid samples (SiO 2 , GaAs, SiC and C1154 alloy) using a high intensity (10 14 -10 15 Wcm À2 ) 35 ps laser at 532 nm with time-of-flight mass spectrometry. The results, with the relative sensitivity factors (RSFs) close to unity, showed that the saturation of the multiphoton ionisation and uniform ionisation yields were achieved even for species with different ionisation potentials.…”
mentioning
confidence: 99%