“…For quantitative surface and material analysis, Becker and He et al [19][20][21][22] have studied some gases (Ar, Kr, NO, Xe, N 2 , and O 2 ) and solid samples (SiO 2 , GaAs, SiC and C1154 alloy) using a high intensity (10 14 -10 15 Wcm À2 ) 35 ps laser at 532 nm with time-of-flight mass spectrometry. The results, with the relative sensitivity factors (RSFs) close to unity, showed that the saturation of the multiphoton ionisation and uniform ionisation yields were achieved even for species with different ionisation potentials.…”