Surface affinity role in graphoepitaxy of lamellar block copolymers

Claveau, G.; Quéméré, Patrick; Argoud, Maxime; Hazart, J.; Barros, P. Pimenta; Sarrazin, A; Possémé, N.; Tiron, Raluca; Chevalier, Xavier; Nicolet, Célia; Navarro, Christophe

doi:10.1117/1.jmm.15.3.031604

Cited by 7 publications

(2 citation statements)

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“…Graphoepitaxy, on the other hand, is based on the definition of 3D features on the substrate, within DSA takes place [ 68 , 69 , 70 , 71 , 72 ]. These topographical templates can be physically tailored, and bottom and walls along the trenches chemically modified to impose different affinity to each of the polymer blocks, enforcing their orientation along the topography [ 73 , 74 ].…”

Section: Principles Of the Dsa Of Block Copolymersmentioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

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Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

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Section: Principles Of the Dsa Of Block Copolymersmentioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

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“…For applications requiring aperiodic patterning, graphoepitaxy is more suitable 7,8 (Figure 1a top-right and bottom-right). In this process, topographical guides isolate small clusters of cylinders or lamellae, breaking the natural periodicity of the BCP.…”

Section: For Semiconductor Technologymentioning

confidence: 99%

Self-assembly for electronics

et al. 2020

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Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability

et al. 2018

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Extreme ultraviolet interference lithography (EUV-IL) is used to manufacture topographical guiding patterns to direct the self-assembly of block copolymers. High-accuracy silicon oxide-like patterns with trenches ranging from 68 nm to 117 nm width are fabricated by exposing a hydrogen silsesquioxane (HSQ) resist layer using EUV-IL. We investigate how the accuracy, the low line width roughness and the low line edge roughness of the resulting patterns allow achieving DSA line/space patterns of a PS-b-PMMA (polystyrene-block-poly methyl methacrylate) block copolymer of 11 nm half-pitch with low defectivity. We conduct an in-depth study of the dependence of the DSA pattern morphology on the trench width and on how the neutral brush covers the guiding pattern. We identify the relation between trench width and the emergence of defects with nanometer precision. Based on these studies, we develop a model that extends available free energy models, which allows us to predict the patterning process window.

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Surface affinity role in graphoepitaxy of lamellar block copolymers

Cited by 7 publications

References 20 publications

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Self-assembly for electronics

Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability

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