Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimōto, Toshiki; Yamamoto, Hideki

doi:10.1063/1.4901938

Cited by 57 publications

(44 citation statements)

References 21 publications

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“…Nearly the same value of breakdown voltage is obtained for the HEMT before release and after transfer, indicating that the influence of the transfer to the Cu on the breakdown voltage is probably small. Before release, the noticeable negative resistance in which I d decreased by about 20% was observed, as we have previously reported (not shown here) . After transfer, as a result of the improvement of the heat dissipation, the negative resistance was significantly reduced.…”

Section: Resultssupporting

confidence: 89%

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique

Hiroki

Kumakura

Yamamoto

2017

Phys. Status Solidi A

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We transferred AlGaN/GaN high‐electron‐mobility transistors (HEMTs) from a sapphire substrate to a copper plate using a hexagonal boron nitride (h‐BN) epitaxial lift‐off technique. The bonding adhesion between the HEMTs and the copper plate is improved by optimizing Au–Au thermocompression processes and removing the h‐BN residual layer after the lift‐off. Thermal resistance estimated by Raman thermography is as low as 6 mm∘C/W, which is comparable to that of a HEMT grown on SiC substrate.As a result, the reduction in Id versus Vds due to self‐heating effect is suppressed to a negligible level. These results indicate that the substrate transfer technique is effective for achieving high‐power performance of GaN‐based electron devices.

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Section: Resultssupporting

confidence: 89%

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique

Hiroki

Kumakura

Yamamoto

2017

Phys. Status Solidi A

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“…With the same P d , the tri-gate HEMT exhibited a smaller T avg as compared to the planar. Such reduction of T avg is comparable or greater than other technologies proposed for improve the heat dissipation of GaN electronics such as graphene-graphite quilts [6], Cu-filled backside via [7], substrate transfer using h-BN [8], and nanocrystalline diamond thin film [9]. Figure 4 (b) also reveals a smaller thermal resistance (R TH ) for the trigate HEMT.…”

Section: Resultsmentioning

confidence: 67%

Improved electrical and thermal performances in nanostructured GaN devices

Matioli

2016

2016 International Conference on IC Design and Technology (ICICDT)

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Metal Buffer Cathode Hybrid tri-anode SiO 2 (a) L SCH = 3 µm L MOS = 1 µm (b) Fig. 1. (a) The schematic of AlGaN/GaN hybrid tri-anode SBDs and (b) topview SEM observation of the hybrid tri-anode.Abstract-Electrical and thermal performances were enhanced for AlGaN/GaN Schottky barrier diodes (SBDs) using a nanostructured anode technology. The fabricated SBDs presented small turn-on voltage of 0.95 V, large output current density over 1 A/mm, low reverse leakage current below 1 nA/mm and diminished self-heating. Additionally, the nanostructured electrode greatly reduced the thermal resistance of the device by about 50% and hence improved the thermal performance of GaN SBDs as well as transistors. Furthermore, geometry of the nanostructured electrode had a large impact on device performance, which was presented and analyzed in this work.

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“…[18], the Tavg obtained by this method is close to the Tavg measured by micro-Raman thermography at low power levels although it may neglect the effect of traps). With the same applied power (Pa), the tri-gate HEMT exhibited a much reduced Tavg compared to the planar, which is comparable or greater than other technologies proposed for thermal management of GaN electronics such as graphene-graphite quilts [19], Cu-filled backside via [20], substrate transfer using h-BN [21] and nanocrystalline diamond thin film [22]. Figure 4 (b) also suggests a smaller thermal resistance (RTH) for the tri-gate HEMT, which is consistent with a recent report in the literature [10].…”

Section: Resultsmentioning

confidence: 92%

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Santoruvo

Tandon

et al. 2016

IEEE Trans. Electron Devices

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Abstract-Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates three-dimensional Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density with improved linearity, above 1 A/mm at 5 V when normalized by effective anode width, over 3 orders of magnitude lower reverse leakage current and superior heat dissipation. The sidewall Schottky contacts reduced the turn-on voltage and eliminated the non-ideality caused by the AlGaN barrier. The large surface area of tri-gate architecture greatly enhanced heat dissipation and largely reduced the average temperature as well as thermal resistance of the integrated tri-gate transistors. The trench conduction near SiO2/GaN interface, formed under forward bias at both sidewalls and bottom of nanowire trenches, compensated part of the self-heating degradation and improved the output linearity of the device. Optimal design for the tri-anode structure, based on a model of critical filling factor, was proposed to surmount the issue of partial removal of two-dimensional electron gas (2DEG), unveiling the potential of nanostructured GaN devices to achieve comparable or even larger output current than counterpart planar devices.

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Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Cited by 57 publications

References 21 publications

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique

Improved electrical and thermal performances in nanostructured GaN devices

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

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