Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using &lt;italic&gt;In Situ&lt;/italic&gt; Heating

Hou, Minmin; So, Hongyun; Suria, Ateeq J.; Yalamarthy, Ananth Saran; Senesky, Debbie G.

doi:10.1109/led.2016.2626388

Cited by 71 publications

(55 citation statements)

References 18 publications

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“…To understand the physical mechanism of photocurrent behavior with temperature, the slow components of rise time (τr2) was plotted with 1/T as depicted in figure 4(a). [48][49] The activation energies of 73 and 205 meV were obtained from the linear fit of the Arrhenius plot of rise time τr2 below and above 150°C respectively. The physical meaning of negative activation energy is related to the carrier generation/recombination ratio.…”

mentioning

confidence: 99%

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

Tak

Garg

Dewan

et al. 2019

Journal of Applied Physics

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High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo current to dark current (PDCR) ratio of about 7100 was observed at room temperature (RT) while it had a value 2.3 at 250 °C at 10 V applied bias. A decline in photocurrent was observed from RT to 150 °C and then it increased with temperature up to 250 °C. The suppression of the blue band was also observed from 150 °C temperature which indicated that self-trapped holes in Ga2O3 became unstable. Temperature-dependent rise and decay times of carriers were analyzed to understand the photocurrent mechanism and persistence photocurrent at high temperatures. Coupled electron-phonon interaction with holes was found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

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confidence: 99%

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

Tak

Garg

Dewan

et al. 2019

Journal of Applied Physics

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“…Persistent photoconductivity in III‐nitrides can last for hours and days . GaN can absorb a very broad range of UV wavelengths but its persistent photoconductivity can limit its utility in photodetection sensors . However, if one desires a change in the conductivity of the material that is present after light exposure, persistent photoconductivity can be a beneficial phenomenon.…”

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confidence: 99%

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

Snyder

Kirste

Collazo

et al. 2017

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Wide bandgap semiconductors such as gallium nitride (GaN) exhibit persistent photoconductivity properties. The incorporation of this asset into the fabrication of a unique biointerface is presented. Templates with lithographically defined regions with controlled roughness are generated during the semiconductor growth process. Template surface functional groups are varied using a benchtop surface functionalization procedure. The conductivity of the template is altered by exposure to UV light and the behavior of PC12 cells is mapped under different substrate conductivity. The pattern size and roughness are combined with surface chemistry to change the adhesion of PC12 cells when the GaN is made more conductive after UV light exposure. Furthermore, during neurite outgrowth, surface chemistry and initial conductivity difference are used to facilitate the extension to smoother areas on the GaN surface. These results can be utilized for unique bioelectronics interfaces to probe and control cellular behavior.

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“…Published by AIP Publishing. https://doi.org/10.1063/1.5006650 III-nitride (III-N) material systems have attracted extensive research interest in both electronics and optoelectronics, including high-electron-mobility transistors, 1 power diodes, [2][3][4] solid-state lighting, [5][6][7] photovoltaics (PV), [8][9][10][11] photodetectors, [12][13][14] and visible light communication. 15 Due to their unique properties, such as tunable wide bandgaps, 16 high absorption coefficient, high thermal stability, and outstanding radiation resistance, 17 InGaN materials have also been proposed as ideal candidates for PV applications especially for high temperature operation or in a harsh environment.…”

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confidence: 99%

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Huang

Chen

et al. 2017

Applied Physics Letters

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We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray Diffraction analysis reveals that material quality of InGaN/GaN did not degrade after thermal stress. The external quantum efficiency characteristics of solar cells were well-maintained at all temperatures, which demonstrates the thermal robustness of InGaN materials. Analysis of current density–voltage (J–V) curves shows that the degradation of conversion efficiency of solar cells is mainly caused by the decrease in open-circuit voltage (Voc), while short-circuit current (Jsc) and fill factor remain almost constant. The decrease in Voc after thermal stress is attributed to the compromised metal contacts. Transmission line method results further confirmed that p-type contacts became Schottky-like after thermal stress. The Arrhenius model was employed to estimate the failure lifetime of InGaN solar cells at different temperatures. These results suggest that while InGaN solar cells have high thermal stability, the degradation in the metal contact could be the major limiting factor for these devices under high temperature operation.

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Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using <italic>In Situ</italic> Heating

Cited by 71 publications

References 18 publications

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

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