Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon-implanted channels

Ban, I.; Öztürk, Mehmet C.; Demirlioglu, E.

doi:10.1109/16.622613

Cited by 37 publications

(17 citation statements)

References 16 publications

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“…One of the principal technologies for scalling down the CMOSFET is ultra-shallow junction (USJ), which requires formation of very shallow, abrupt dopant profiles with high activation. Recently, it was found that co-implantation of carbon (C) in a range comparable with boron (B) concentrations could suppress B diffusion, resulting in a box-like B profile shape [1][2][3][4] . On the other hand, the reducing of B activation in the presence of C has been reported [2,4] .…”

Section: Introductionmentioning

confidence: 99%

“…Recently, it was found that co-implantation of carbon (C) in a range comparable with boron (B) concentrations could suppress B diffusion, resulting in a box-like B profile shape [1][2][3][4] . On the other hand, the reducing of B activation in the presence of C has been reported [2,4] . Those phenomena were attributable to the formation of C-interstitial clusters [5] .…”

Section: Introductionmentioning

confidence: 99%

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Contribution of Carbon to Activation and Diffusion of Boron in Silicon

Itokawa

Agatsuma

Aoki

et al. 2010

Jpn. J. Appl. Phys.

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Synopsis.1. The differences in the colour of the light radiated from different sources of white light causes uncertainties in photometric determinations. The Paper describes the methods used a t the National Physical Laboratory to minimise this wellknown difficulty by the use of the cascade principle.2. The six sets of electric substandards of candle-power are described, which vary in the colour of the light radiated, from that of the pentane lamp (red) to that of a tungsten vacuum lamp operating a t 1.5 watts per candle.3. The differences between the values obtained by different observers in the process of stepping from one colour t o the next are discussed and compared with those obtained by the direct comparison of the first and last sets of substandards. The probable errors of the determination are discussed ahdshown to be of the order of 0.2, per cent. 5. The :rbsolcite value of the unit of candle-power has been re-determined from the pentane lamp, and found to agree with the determination made by one of the authors 10 years ago to within less than 0.1 per cent.6. The corrections to the pentane lamp for humidity and barometric changes were also redetermined, and found to agree within narrow limits with those previously found by one of the authors. 7.The relatim between the humidity and temperature corrections for the pentane lamp is discussed, and the fact that these two effects may act together is suggested as the reason for a discrepancy which has been noticed between the humidity constants of the lamp as determined in London and Washington.* The work dealt with in the various sections of this Papor has entailed SO many thousands of measurements and candle-power determinations of individual lamps, that to give them in detail would greatly overweight the Paper with tabular matter. The authors have, therefore, felt obliged to limit themselves to summaries of results and sometimes t o bare statements of the results obtained, computed from their manuscript tables. THE UNIT OF CANDLE-POWER, M.S.C.P. M.H.C.P.* Assuming a ratio ofof 0.85 end 0.79 fo; carbon and tungsten filaments respectively, the approximate watts per candle me obtained for any value of lumens per matt by dividing the lattcr into 10.7 for carbon slament lamps, and 10.0 for tungst,en filament lamps.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Contribution of Carbon to Activation and Diffusion of Boron in Silicon

Itokawa

Agatsuma

Aoki

et al. 2010

Jpn. J. Appl. Phys.

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“…In BF 2 however, the position of the F is not optimal for full reduction of TED and experiments have shown that the F should be implanted separately with an energy approximately 10 times that of the B [8]. Deep and shallow C has been shown to strongly reduce TED but concerns remain over its effect on junction leakage [9].…”

Section: Extending Conventional Implantation With Spike Annealmentioning

confidence: 99%

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

et al. 2002

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For the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

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“…In order to avoid implant damage in the SiO 2 gate, channel implantation is usually performed prior to gate oxidation. However, during oxidation, oxidation-enhanced diffusion (OED) due to the injection of self-interstitials contributes significantly to dopant redistribution and makes the desired doping profiles very difficult to obtain [33]. This redistribution is of great concern for boron, the diffusivity of which is mainly determined by the concentration of selfinterstitials.…”

Section: Suppression Of the Boron Diffusionmentioning

confidence: 99%

On the distribution of eigenvectors of Toeplitz matrices with weakened requirements on the generating function

Замарашкин¹,

Тыртышников²

1997

Russ. Math. Surv.

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We have grown by reduced pressure-chemical vapour deposition Si/Si 1−y C y /Si heterostructures for electrical purposes. The incorporation of substitutional carbon atoms into Si creates a carrier confinement in the channel region of metal oxide semiconductor (MOS) transistors. Indeed, tensile-strained Si 1−y C y layers present a type II band alignment with Si, with a conduction band offset of the order of 60 meV per atomic% of substitutional carbon atoms. For small SiH 6 flows, all the incoming carbon atoms are incorporated into substitutional sites. At 550 • C, when the SiCH 6 flow increases, the substitutional carbon concentration saturates at 1.44%. Meanwhile, the total carbon concentration C T still increases, following a simple law: C T /(1 − C T ) = (0.88-0.92)(F(SiCH 6 )/(F(SiH 4 )). This is a sign that a growing number of C atoms incorporates into interstitial sites. The hydrogenated chemistry adopted does not enable us to achieve selectivity over SiO 2 -masked wafers, but does not generate any adverse loading effect. We have integrated Si/Si 1−y C y /Si stacks (which have been shown to be stable versus conventional gate oxidations and electrical activation anneals) into the channel region of ultra-short gate length (40 nm) nMOS transistors. Secondary ion mass spectrometry profiling has shown that C atoms segregate from the Si 1−y C y layer into the Si cap and the SiO 2 gate, but also that they block the diffusion paths of B coming from the anti-punch through layer towards the gate, generating very retrograde doping profiles. The addition of C leads to a slight degradation of the electron mobility which seems to be linked to the presence of C atoms into interstitial sites. Finally, we have shown that using higher silane and methylsilane mass flows enables us to obtain higher substitutional C concentrations (max: 1.98%) in our Si 1−y C y layers, with a good resulting structural quality.(Some figures in this article are in colour only in the electronic version) High C content Si/Si 1−y C y heterostructures for n-type metal oxide semiconductor transistors

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Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon-implanted channels

Cited by 37 publications

References 16 publications

Contribution of Carbon to Activation and Diffusion of Boron in Silicon

Contribution of Carbon to Activation and Diffusion of Boron in Silicon

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

On the distribution of eigenvectors of Toeplitz matrices with weakened requirements on the generating function

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