Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

Jelenković, Emil V.; To, Suet

doi:10.1007/s13391-017-6348-6

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…The discovery of a number of specific structures and phase transformations in silicon material [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] has attracted great attention in semiconductor industry in the recent decades. The physical properties of silicon materials are significantly affected by stress, which may lead to the evolution of phase transformation and the change of electric conductivity of the material.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Mechanical and Mechanically-Induced Electrical Properties of Silicon Nanowires

Lin

Chen

2019

Crystals

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Molecular dynamics (MD) simulation was employed to examine the deformation and phase transformation of mono-crystalline Si nanowire (SiNW) subjected to tensile stress. The techniques of coordination number (CN) and centro-symmetry parameter (CSP) were used to monitor and elucidate the detailed mechanisms of the phase transformation throughout the loading process in which the evolution of structural phase change and the dislocation pattern were identified. Therefore, the relationship between phase transformation and dislocation pattern was established and illustrated. In addition, the electrical resistance and conductivity of SiNW were evaluated by using the concept of virtual electric source during loading and unloading similar to in situ electrical measurements. The effects of temperature on phase transformation of mono-crystalline SiNWs for three different crystallographically oriented surfaces were investigated and discussed. Simulation results show that, with the increase of applied stress, the dislocations are initiated first and then the phase transformation such that the total energy of the system tends to approach a minimum level. Moreover, the electrical resistance of (001)- rather than (011)- and (111)-oriented SiNWs was changed before failure. As the stress level of the (001) SiNW reaches 24 GPa, a significant amount of metallic Si-II and amorphous phases is produced from the semiconducting Si-I phase and leads to a pronounced decrease of electrical resistance. It was also found that as the temperature of the system is higher than 500 K, the electrical resistance of (001) SiNW is significantly reduced through the process of axial elongation.

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Section: Introductionmentioning

confidence: 99%

Nanoscale Mechanical and Mechanically-Induced Electrical Properties of Silicon Nanowires

Lin

Chen

2019

Crystals

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“…At present, there is a growing interest in understanding the mechanical properties of micro-and nanosized structures due to their wide applications in the development of micro-electromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) [1][2][3][4][5][6]. These micro and nano components are capable of withstanding complex stress with little risk of failure.…”

Section: Introductionmentioning

confidence: 99%

Atomistic Simulation of the Effect of Temperature on Mechanical Properties of some Nano-Crystalline Metals

Igwe

Batsari

2022

Afr. Sci. Rep.

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For materials with high ductility, malleability and conductivity, temperature will have significant impact on the material properties. This is especially true for pure elemental metals which have a wide range of applications due to their ultrahigh strengths. Recently, the study of damage mechanism at the nano- and micro level has attracted a significant interest and research. However, the current understanding of deformation mechanisms in nanocrystalline metals in relation to atomic structure and behavior is insufficient. In this study, atomistic simulation of uniaxial tension at nano-scale was performed at a fixed rate of loading (500 ms^-1) on some nano-crystalline face centered cubic metals (Al, Cu, and Ni), to study the nature of tensile deformation at different temperatures using the embedded-atomic method (EAM) potential function. The simulation results show a rapid increase in the stress up to a maximum value followed by a sharp drop when the nanocrystal fails by ductile dislocation. The drop in the stress-strain curves can be attributed to the rearrangement of atoms to a new or modified crystalline structure. Additional simulations were run to study the effects of temperature on the stress-strain curve of nano-crystals. The result shows that increasing temperature weakens the ductility of these nanomaterials. In this investigation, the strain corresponding to yielding stress is observed to be lower with increasing temperature. Finally, the evolution of crystalline microstructure during the entire tensile process was investigated. The atomistic simulation result of tensile deformation at nanoscale obtained in this study agree with plasticity phenomenon observed in macroscale.

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Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

Cited by 2 publications

References 19 publications

Nanoscale Mechanical and Mechanically-Induced Electrical Properties of Silicon Nanowires

Nanoscale Mechanical and Mechanically-Induced Electrical Properties of Silicon Nanowires

Atomistic Simulation of the Effect of Temperature on Mechanical Properties of some Nano-Crystalline Metals

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