In proton-conducting oxides, analyses for their electronic structure contribute to the understanding of interactions between defects in them. In this study, electronic band alignment of (1−x)BaZr 0.8 Y 0.2 O 3−δ (BZY)-xSrZr 0.95 Y 0.05 O 3−δ (SZY) protonconducting solid-solution system (BSZY) which has high defect concentration and the deep valence band is experimentally investigated. By using thin-film specimens for optical absorption measurements, absorption edges derived from electron transition from the valence band to the conduction band which was insensitive to the proton incorporation were clearly observed in spite of the high defect concentration.The obtained optical band gap energy increased from 5.61 to 5.89 eV with increasingx, which was consistent with a composition dependence of Zr(Y)O 6 octahedral tilting. Ultraviolet photon-yield spectroscopy (UV-PYS) measurements under vacuum condition revealed that BZY and SZY had ionization energy of 6.98 and 7.31 eV, respectively, and thus the absolute energy levels of the valence band maximum and the conduction band minimum of BSZY were experimentally clarified. We propose that the combination of the optical absorption measurements using thin-film specimens and the UV-PYS measurements under vacuum condition is effective in evaluating fundamental electronic structures of proton-conducting oxides.