Abstract:A multi-grooves barrier-etched structure between barrier layer and passivation layer is proposed in this paper to suppress the hot electron effect at the gate edge on the drain side in the p-GaN gate AlGaN/GaN high-electron-mobility transistor. In the TCAD simulations, the groove structure induces extra electric field concentration region and AlGaN/SiN interface area, which can lower the high electric field peak and lattice temperature in the channel at the gate edge, leading to the alleviated capture and rele… Show more
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