Suppression of GeO<sub>x</sub> interfacial layer and enhancement of the electrical performance of the high-<i>K</i> gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Wang, Chin-I.; Chang, Teng-Jan; Wang, Chun-Yuan; Yin, Yu-Tung; Shyue, Jing‐Jong; Lin, Hung-Yun; Chen, Miin-Jang

doi:10.1039/c8ra07652a

Cited by 8 publications

(3 citation statements)

References 48 publications

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“…Besides, the two other binding peaks detected at 29.2 and 29.8 eV in the XPS spectrum of the Ge 3d core level are attributed to Ge 0 3d 5/2 and Ge 0 3d 3/2 (Ge metal), respectively. 16,32,34 These XPS results suggest that crystalline Ge was synthesized successfully, with subsequent air exposure leading to the formation of GeO and GeO 2 .…”

Section: Resultsmentioning

confidence: 87%

Binder-free germanium nanoparticle decorated multi-wall carbon nanotube anodes prepared via two-step electrophoretic deposition for high capacity Li-ion batteries

Pham,

Abdul Ahad,

Patil

et al. 2024

Nanoscale Horiz.

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Section: Resultsmentioning

confidence: 87%

Binder-free germanium nanoparticle decorated multi-wall carbon nanotube anodes prepared via two-step electrophoretic deposition for high capacity Li-ion batteries

Pham,

Abdul Ahad,

Patil

et al. 2024

Nanoscale Horiz.

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“…In our previous work, an aluminum nitride (AlN) passivation layer prepared by plasma-enhanced atomic layer deposition (ALD) on Ge was proposed and investigated to prevent the formation of unstable interfacial GeO x . As an interface passivation layer in the gate stack on Ge, AlN has attractive properties including higher dielectric constant than GeO x , a wide band gap of ∼6.2 eV and good chemical and thermal stabilities. , As a result, electrical characteristics of Ge metal–oxide–semiconductor (MOS) capacitors were significantly improved by the AlN passivation layer.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks

Wang

Chang

Yin

et al. 2020

ACS Appl. Electron. Mater.

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The impact of atomic layer bombardment (ALB) on the aluminum nitride (AlN) passivation layer between the HfO 2 gate dielectric and the n-type epitaxial germanium (Ge) was investigated. The ALB technique was performed with the layer-by-layer, in situ helium/argon plasma bombardment in each cycle of atomic layer deposition (ALD) of AlN. An increase in the film density and a decrease in nitrogen vacancies, as manifested by the X-ray reflection and X-ray spectroscopy, were observed in the AlN layer treated by the ALB process. The improvements in the AlN quality contribute to a reduction of the equivalent oxide thickness from 1.36 to 1.19 nm of the AlN/HfO 2 gate stack, together with the suppression of the gate leakage current, the interfacial state density, and the slow trap density. The reliability tests reveal promising reliability of the AlN/HfO 2 gate stack with a small flat-band voltage shift under the constant voltage stress and a high operation voltage of ∼2.4 V projected for a 10 years time-dependent-dielectricbreakdown lifetime. All of the results point that the ALB technique can effectively enhance the material/interface properties, electrical characteristics, and reliability of nanoscale devices, which is critical and beneficial to the next-generation high-speed and low-power nanoelectronics.

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“…Atomic layer deposition (ALD) for membrane-forming technology alternately pulses the vapor into the reaction chamber and allows the target species chemisorb on the surface of the carrier. , ALD has been widely used in microelectronics, − optoelectronics, − nanotechnology, , batteries, energy, organic electronic packaging, , separation membranes, , electrocatalysis, and organic pollutant degradation . In recent years, a large number of catalytic materials have been prepared by ALD.…”

Section: Introductionmentioning

confidence: 99%

Pd Nanoparticles Loaded on Ceramic Membranes by Atomic Layer Deposition with Enhanced Catalytic Properties

Jia

Chen

et al. 2020

Ind. Eng. Chem. Res.

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Atomic layer deposition (ALD) was adopted for the first time to load Pd nanoparticles on Al2O3 ceramic membranes (CMs) for fabricating catalytic membranes (Pd/CMs). The membrane surface was functionalized with the deposition of TiO2 by ALD and subsequent calcination under different atmospheres [CM-TiO2-A, obtained by calcination under an atmosphere of pure argon; CM-TiO2-H, obtained by calcination under a mixed atmosphere of H2 and Ar (H2/Ar = 1:9 in volume)]. The influence of the TiO2 deposition on the microstructure of catalytic membranes and their catalytic performance in p-nitrophenol reduction to p-aminophenol were investigated in detail. The catalytic activity of Pd/CM-TiO2-H improved by 1.9 times compared to Pd/CM, and 100% conversion of p-nitrophenol to p-aminophenol can be achieved. The X-ray photoelectron spectroscopy (XPS), inductively coupled plasma emission spectroscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy results indicate that the ALD of TiO2 and subsequent calcination under a 10% H2 atmosphere can produce more surface oxygen vacancies, providing more active sites for Pd(hfac)2 adsorption and then promoting the loading of Pd nanoparticles. The XPS and H2 temperature-programmed reduction results suggest that calcining TiO2 under the 10% H2 atmosphere is more beneficial for the removal of the hfac ligands and the reduction of Pd(hfac)2, leading to a higher Pd0 ratio. These two aspects contribute to the superior catalytic activity of Pd/CM-TiO2-H.

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Suppression of GeO_x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Abstract: For high-performance Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx). An AlN buffer layer effectively suppresses the interfacial GeOx, and produces a significant enhancement of the electrical characteristics.

Cited by 8 publications

References 48 publications

Binder-free germanium nanoparticle decorated multi-wall carbon nanotube anodes prepared via two-step electrophoretic deposition for high capacity Li-ion batteries

Binder-free germanium nanoparticle decorated multi-wall carbon nanotube anodes prepared via two-step electrophoretic deposition for high capacity Li-ion batteries

Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks

Pd Nanoparticles Loaded on Ceramic Membranes by Atomic Layer Deposition with Enhanced Catalytic Properties

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Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Abstract: For high-performance Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx). An AlN buffer layer effectively suppresses the interfacial GeOx, and produces a significant enhancement of the electrical characteristics.

Cited by 8 publications

References 48 publications

Binder-free germanium nanoparticle decorated multi-wall carbon nanotube anodes prepared via two-step electrophoretic deposition for high capacity Li-ion batteries

Binder-free germanium nanoparticle decorated multi-wall carbon nanotube anodes prepared via two-step electrophoretic deposition for high capacity Li-ion batteries

Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks

Pd Nanoparticles Loaded on Ceramic Membranes by Atomic Layer Deposition with Enhanced Catalytic Properties

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Suppression of GeO_x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices