Abstract:Detailed studies of segregation and diffusion of the dopants Si and Be in MBE grown AlGaAs/GaAs heterostructures for optoelectronic devices are presented. Segregation of Si could be suppressed by lowering the substrate temperature during the growth of a few monolayers after the deposition of the doped layers. Solubility limits of Be were observed to depend on the Al mole fraction. Be diffusion in the laser structures was negligible at doping concentrations below these solubility limits As an application, trans… Show more
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