Suppression Mechanism of Volume Shrinkage for SOG Film by Plasma Treatment

Abstract

We investigated the suppression mechanism of volume shrinkage for a spin on glass (SOG) film by plasma treatment using hard X-ray photoelectron spectroscopy, X-ray reflectometry (XRR), and UV-Raman spectroscopy. The suppression of the SOG film shrinkage was attributed to the control of N out-diffusion from the SOG film and O in-diffusion into the SOG film, which was due to the plasma treatment prior to the conventional cure annealing process. It was also confirmed from the XRR measurements that the SOG film was densified by the plasma treatment. Moreover, UV-Raman measurements were performed to evaluate the Si stress at the SiO2/Si interface that was induced during the gap filling process. The stress was controlled by the appropriate plasma treatment. Thus, we concluded that the plasma treatment was effective for the suppressions of SOG film shrinkage and stress induction and for the SOG film densification.

Effect of Plasma Treatment on Stress Reduction Induced by Shallow Trench Isolation Filled with Spin-on-Glass Dielectric

“…densified very surface of the SOG film. This densified layer might be effective enough to control the oxygen indiffusion into the SOG film and the nitrogen out-diffusion from the film during the cure annealing process, and thus, suppress the SOG film shrinkage (14). However, H-pre-P.T.…”

Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2Thin Films on Ge Substrates: Reliability

“…Additionally, SPAO plasma enhances the formation of atomically flat and smoother dielectric surfaces and interfaces. 12,13,18,19 Impact of Zr incorporation on EOT, Flat-band voltage shift, and leakage current density.- Figure 6 shows the impact of Zr incorporation in HfO 2 on EOT, flat-band voltage (Fig. 6a), and gate leakage current density (Fig.…”

“…10 Slot-plane-antenna (SPA) plasma treatment has been shown to enhance the CVD and ALD grown oxides quality and reliability along with better interfacial layer properties when the films were exposed to SPA plasma during or after the deposition. 4,[11][12][13] The SPA process provides high density plasma (∼10 12 cm −3 ) at low electron temperature (0.7∼1.5 eV) with a wide process window (7∼1000 Pa) to enable a low damage plasma process compared to conventional inductively coupled plasma (ICP) or electron cyclotron resonance (ECR) plasma. 14 Recently, the use of slot-plane-antenna plasma oxidation (SPAO) has been studied for TiN/ZrO 2 /Al 2 O 3 /Ge MOS capacitors, where SPAO has been introduced in different stages (before Al 2 O 3 deposition, in between Al 2 O 3 and ZrO 2 deposition, and after the deposition of both Al 2 O 3 and ZrO 2 ) during the gate stack formation.…”

Reliability of Post Plasma Oxidation Processed ALD Al 2 O 3 /Hf 1-x Zr x O 2 Thin Films on Ge Substrates

“…Different ratio of Hf/(Hf+Zr)% ranging from 0, 0.25, 0.33, 0.50, 0.75, and 1.0 were deposited and confirmed by XPS (2). Following the ALD Hf 1-x Zr x O 2 formation, the devices were subjected to in situ post deposition microwave plasma treatment in SPA (13,14). Finally, 5nm ALD TiN and 50nm PVD TiN metal gate was deposited to form metal oxide semiconductor (MOS) capacitors, as shown in Fig.…”

“…Slot-plane-antenna (SPA) plasma treatment with inert gases like He, Ar has been shown to enhance the CVD and ALD grown oxides quality and reliability along with better interfacial layer properties when the films were exposed to SPA plasma during or after the deposition. (4, [11][12][13]. The SPA process provides high density plasma (~10 12 cm -3 ) at low electron temperature (0.7 ~1.5 eV) with a wide process window (7~1000 Pa) to enable a low damage plasma process compared to conventional inductively coupled plasma (ICP) or electron cyclotron resonance (ECR) plasma (14).…”