Suppression mechanism of transverse-mode spurious responses in SAW resonators on a SiO&lt;inf&gt;2&lt;/inf&gt;/Al/LiNbO&lt;inf&gt;3&lt;/inf&gt; structure

Nakamura, Hiroyuki; Nakanishi, Hiroyuki; Goto, Rei; Hashimoto, Ken–ya

doi:10.1109/ultsym.2011.0131

Cited by 6 publications

(2 citation statements)

References 21 publications

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“…11d. The alleviation of this effect would require the use of SAW devices with improved spurious-mode behaviour, either by partially suppressing the spurious modes or by separating them more from the main resonance as suggested in [23,24]. However, their technology is not yet mature enough to reach commercialisation.…”

Section: Prototypementioning

confidence: 99%

Hybrid surface‐acoustic‐wave/microstrip signal‐interference bandpass filters

Gómez‐García¹,

Psychogiou

Loeches-Sánchez³

et al. 2016

IET Microwaves, Antennas & Propagation

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Radio‐frequency (RF) design techniques for the development of signal‐interference microwave bandpass filters (BPFs) with hybridised microstrip and surface‐acoustic‐wave (SAW) elements are reported. They make use of two original types of transversal filtering sections (TFSs) with embedded one‐port SAW resonators. The SAW resonators operate either as non‐resonating nodes or as an in‐band SAW BPF in their bi‐path circuit topologies. These new TFS approaches extend the suitability of signal‐interference BPFs to small‐fractional‐bandwidth (FBW) applications, while offering significant advantages in terms of filtering selectivity and occupied circuit size when compared to traditional solutions for narrow‐to‐moderate/wide‐band specifications. Broader FBWs than those attainable through most of the available all‐acoustic‐wave BPF configurations are also feasible with them. Moreover, a single type of SAW device is employed in the entire BPF structure, which results in a practical benefit regarding robustness to deviations in the prototype fabrication and assembly processes. The proposed filter design concepts are experimentally verified through the fabrication in microstrip technology and characterisation of two multi‐TFS‐series‐cascade‐based high‐order BPF prototypes with very‐narrow and moderate FBWs.

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Section: Prototypementioning

confidence: 99%

Hybrid surface‐acoustic‐wave/microstrip signal‐interference bandpass filters

Gómez‐García¹,

Psychogiou

Loeches-Sánchez³

et al. 2016

IET Microwaves, Antennas & Propagation

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“…There are also previous research studies that investigated the effect of the deposited shape of the SiO 2 film on SAW device characteristics. [14][15][16][17][18][19] The reason why research studies on the SiO 2 film have been actively conducted is that the SiO 2 film has TCF whereby positive and negative are different from those of the substrate materials. Therefore, when it is necessary to improve the TCF of the SAW devices, the SiO 2 film for passivation is better than the Si 3 N 4 film, which has the same sign of TCF as the substrate materials.…”

Section: Introductionmentioning

confidence: 99%

Frequency response study of surface acoustic wave devices with SiO _x N _y film using LiTaO₃ substrate

Nishimura¹,

Matsuda²,

Kabe³

et al. 2018

Jpn. J. Appl. Phys.

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In an attempt to suppress the frequency variation of a surface acoustic wave device caused by dielectric film deposition on an interdigital transducer (IDT) electrode, we fabricated a one-port resonator and examined the correlation with frequency response and refractive index when a SiOxNy film is deposited. Our data showed that the resonator frequency changes as the refractive index of the SiOxNy film changes. We also found that the frequency drift caused by the SiOxNy deposition can be suppressed if the refractive index is kept in a certain range. Then, we performed a finite element method spectral domain analysis to calculate frequency response using the Young’s modulus obtained in this experiment. The calculated frequency response indicated that the refractive index of the SiOxNy film needs to be altered in accordance with the IDT electrode thickness. We suggest that one of the effective ways of controlling the frequency response is to manage the refractive index of SiOxNy.

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The Impact of Selectively Filling with SiO₂on Transverse Modes in TC-SAW Resonators

Li,

Qi,

Chen

et al. 2024

2024 IEEE MTT-S International Conference on Microwave Acoustics &Amp;amp; Mechanics (IC-MAM)

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Suppression mechanism of transverse-mode spurious responses in SAW resonators on a SiO<inf>2</inf>/Al/LiNbO<inf>3</inf> structure

Cited by 6 publications

References 21 publications

Hybrid surface‐acoustic‐wave/microstrip signal‐interference bandpass filters

Hybrid surface‐acoustic‐wave/microstrip signal‐interference bandpass filters

Frequency response study of surface acoustic wave devices with SiO _x N _y film using LiTaO₃ substrate

The Impact of Selectively Filling with SiO₂on Transverse Modes in TC-SAW Resonators

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Suppression mechanism of transverse-mode spurious responses in SAW resonators on a SiO<inf>2</inf>/Al/LiNbO<inf>3</inf> structure

Cited by 6 publications

References 21 publications

Hybrid surface‐acoustic‐wave/microstrip signal‐interference bandpass filters

Hybrid surface‐acoustic‐wave/microstrip signal‐interference bandpass filters

Frequency response study of surface acoustic wave devices with SiO x N y film using LiTaO3 substrate

The Impact of Selectively Filling with SiO2on Transverse Modes in TC-SAW Resonators

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Product

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Frequency response study of surface acoustic wave devices with SiO _x N _y film using LiTaO₃ substrate

The Impact of Selectively Filling with SiO₂on Transverse Modes in TC-SAW Resonators