Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

Investigation of Radiation Recombination Channels in Long-Wavelength InAs/InAsSb/InAsSbP LED Heterostructures

“…These lines can be attributed to radiative recombination transitions related to the active layer of the heterostructure. The high-energy lines in the spectra are, most likely, associated with recombination in the InAs substrate, as reported previously [5]. Their FWHM values are of the order of 15 meV.…”

“…However, the energies of these peaks greatly exceed the value for g E in the active layers, and therefore, as mentioned above, these peaks should be attributed to radiative recombination channel related to the InAs substrate. The energies of these peaks are ~15 meV smaller than the bandgap of InAs, and according to observations made earlier [5], these highenergy bands most probably originate in the recombination involving donor-acceptor pairs formed by residual impurities and defects in the substrate. According to Fig.…”

“…An increase in the InSb mole fraction in the solution, however, which is necessary for moving to the longer-wavelength part of the MWIR range (λ > 5 µm), leads to a strong increase in the mismatch in the lattice parameters of the InAsSb epitaxial layer and a substrate (typically made of InAs, though GaSb substrates are also often used). This may lead to the appearance of numerous channels of radiative recombination, which may, in fact, be useful in relation to the operation of the LEDs [5], and thus, requires detailed investigations. In this paper, we present the results of the investigation of radiative recombination channels in n-InAs/n-InAsSb/p-InAsSbP LED heterostructures with the mole fraction y of InSb in the InAsSb active layer ranging from 0.075 to 0.16.…”

Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement

“…The generation of mismatch dislocations (accompanied by an increase in the density of extended and point defects) is possible if the magnitude of mismatch between the InAsSb layer and the InAs substrate increases. Experimental EL data for similar narrow-gap asymmetric heterostructures did not reveal any stimulated emission in samples with an elevated InSb concentration in an InAsSb active region [11].…”

“…This has a considerable effect on the formation of the heterointerface between an active InAsSb layer and a barrier InAsSbP layer that is matched in the lattice constant with an InAs substrate [10]. Thus, features inducing the formation of additional recombination channels may emerge at a relatively minor band discontinuity at the heterointerface [11]. The observation of stimulated emission associated with indirect recombination transitions at a type II heterointerface is reported below.…”