“…The SEM images of VO 2 , MoO 3 , Mo 0.2 W 0.8 O 3, and MoS 2 /Si thin films are presented in Figures S1 and S2 and discussed in supplementary information. Large scale MoS 2 thin films have been studied in our previous work by combining CVD and sputtering technique 70 . SEM images (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…For instance, Casalino et al used an asymmetric Al–Si–Cu (metal–semiconductor–metal) structure-based Si photodetector 75 . Moreover, several studies used asymmetric metal contacts for the photodetector application to control the dark current 70 , 74 . Figure 9 The linear I–V characteristics of the MoWO 3 /VO 2 /MoS 2 /Si device in dark and under UV illumination with MoS 2 sputtering time of ( a ) 30, ( b ) 60, ( c ) 120, ( d ) 180, and ( e ) 240 s. …”
Section: Resultsmentioning
confidence: 99%
“…For instance, Casalino et al used an asymmetric Al-Si-Cu (metal-semiconductor-metal) structure-based Si photodetector 75 . Moreover, several studies used asymmetric metal contacts for the photodetector application to control the dark current 70,74 . Fig.…”
Section: Electric and Optoelectronic Properties This Section Discussmentioning
confidence: 99%
“…The calculation of the grain and grain boundaries of interfacing thin films are important parameters that provided information about the nature of interfaces between two layers. 70 . SEM images (Fig.…”
The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.
“…The SEM images of VO 2 , MoO 3 , Mo 0.2 W 0.8 O 3, and MoS 2 /Si thin films are presented in Figures S1 and S2 and discussed in supplementary information. Large scale MoS 2 thin films have been studied in our previous work by combining CVD and sputtering technique 70 . SEM images (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…For instance, Casalino et al used an asymmetric Al–Si–Cu (metal–semiconductor–metal) structure-based Si photodetector 75 . Moreover, several studies used asymmetric metal contacts for the photodetector application to control the dark current 70 , 74 . Figure 9 The linear I–V characteristics of the MoWO 3 /VO 2 /MoS 2 /Si device in dark and under UV illumination with MoS 2 sputtering time of ( a ) 30, ( b ) 60, ( c ) 120, ( d ) 180, and ( e ) 240 s. …”
Section: Resultsmentioning
confidence: 99%
“…For instance, Casalino et al used an asymmetric Al-Si-Cu (metal-semiconductor-metal) structure-based Si photodetector 75 . Moreover, several studies used asymmetric metal contacts for the photodetector application to control the dark current 70,74 . Fig.…”
Section: Electric and Optoelectronic Properties This Section Discussmentioning
confidence: 99%
“…The calculation of the grain and grain boundaries of interfacing thin films are important parameters that provided information about the nature of interfaces between two layers. 70 . SEM images (Fig.…”
The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.
“…So far, some studies have been carried out to suppress the dark current such as incorporating a wide bandgap layer within the metalsemiconductor (MS) contacts [15] and utilizing sulfur co-implantation and segregation [16]. In addition, the asymmetric Schottky barrier and electrode area could also be adopted to reduce the dark current, which has been demonstrated on Si, Ge [17][18][19], GaN [20], and SiGe/Si heterojunction [21] MSM photodetectors. However, a systematic investigation on the effects of asymmetric electrode structures on MgZnO MSM photodetectors' performance, particularly on the dark current suppression, is still not available.…”
The application of asymmetric Schottky barrier and electrode area in an MgZnO metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetector has been investigated by a physical-based numerical model in which the electron mobility is obtained by an ensemble Monte Carlo simulation combined with first principle calculations using the density functional theory. Compared with the experimental data of symmetric and asymmetric MSM structures based on ZnO substrate, the validity of this model is verified. The asymmetric Schottky barrier and electrode area devices exhibit reductions of 20 times and 1.3 times on dark current, respectively, without apparent photocurrent scarification. The plots of photo-to-dark current ratio (PDR) indicate that the asymmetric MgZnO MSM structure has better dark current characteristic than that of the symmetric one.
Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.
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