Suppressing the cellular breakdown in silicon supersaturated with titanium

Liu, Fang; Prucnal, S.; Hübner, René; Yuan, Ye; Skorupa, W.; Helm, M.; Zhou, Shengqiang

doi:10.1088/0022-3727/49/24/245104

Cited by 22 publications

(22 citation statements)

References 37 publications

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“…5(a) . The average cell size, determined to be ~65 nm, is slightly larger than the size obtained from TEM image (~50 nm) 25 . Instead of cellular microstructures, in Fig.…”

Section: Resultsmentioning

confidence: 53%

“…According to cross-sectional TEM analysis, FLA leads to single-crystalline regrowth of the implanted region with the incorporation of defects, such as stacking faults. Additionally, hemispherical particles of single-crystalline nature, partially misaligned compared to the Si substrate and composed of Ti and Si are formed beneath the sample surface 25 . The RBS/channeling results can also be understood if the majority of the Ti atoms form polycrystalline secondary phases.…”

Section: Resultsmentioning

confidence: 99%

“…This network structure consists of (1) walls reaching from the sample surface to around 50 nm in depth and (2) a thin surface layer covering some of the cells formed by the walls mentioned above. According to high-resolution TEM analysis, the Ti-rich walls are characterized by an amorphous microstructure 25 . Hence, for the sample implanted at the highest fluence of 1.2 × 10 16 cm −2 , a complete cellular breakdown occurs at the sample surface, which is due to the occurrence of constitutional supercooling in the molten stage 23 , 24 , 35 .…”

Section: Resultsmentioning

confidence: 99%

“…%) during rapid solidification 24 . In a recent paper, we have also reported that the cellular breakdown takes place in Ti-implanted Si samples after pulsed laser annealing (PLA), but it can be effectively suppressed by millisecond-flash lamp annealing (FLA) 25 . The appearance of cellular breakdown prevents Ti incorporation into the single-crystalline Si matrix.…”

Section: Introductionmentioning

confidence: 99%

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On the insulator-to-metal transition in titanium-implanted silicon

Liu

Wang

Berencén

et al. 2018

Sci Rep

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Hyperdoped silicon with deep level impurities has attracted much research interest due to its promising optical and electrical properties. In this work, single crystalline silicon supersaturated with titanium is fabricated by ion implantation followed by both pulsed laser melting and flash lamp annealing. The decrease of sheet resistance with increasing Ti concentration is attributed to a surface morphology effect due to the formation of cellular breakdown at the surface and the percolation conduction at high Ti concentration is responsible for the metallic-like conductivity. The insulator-to-metal transition does not happen. However, the doping effect of Ti incorporation at low concentration is not excluded, which might be responsible for the sub-bandgap optical absorption reported in literature.

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“…5(a) . The average cell size, determined to be ~65 nm, is slightly larger than the size obtained from TEM image (~50 nm) 25 . Instead of cellular microstructures, in Fig.…”

Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On the insulator-to-metal transition in titanium-implanted silicon

Liu

Wang

Berencén

et al. 2018

Sci Rep

Self Cite

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“…However, it has only proven to be useful for the fabrication of chalcogen-hyperdoped silicon [30]. In the case of transition-metal-hyperdoped silicon, nonhomogeneous hemispherical particles of Si containing Ti are obtained [31]. Therefore, we decided to use the PLM process for the fabrication of V hyperdoped Si samples.…”

Section: Resultsmentioning

confidence: 99%

Vanadium supersaturated silicon system: a theoretical and experimental approach

García-Hemme¹,

García²,

Palacios³

et al. 2017

J. Phys. D: Appl. Phys.

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The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 /jm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

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Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping

Wang

García-Hemme

Berencén

et al. 2020

Advanced Optical Materials

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Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly, and can enable the development of on‐chip complementary metal‐oxide‐semiconductor (CMOS)‐compatible photonic systems. However, extending their room‐temperature photoresponse into the mid‐wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room‐temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p‐n photodiode exhibits a spectral photoresponse up to 5 µm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0–1.9 µm. The correlation between the background noise and the sensitivity of the Te‐hyperdoped Si photodiode, where the maximum room‐temperature specific detectivity is found to be 3.2 × 1012 cmHz1/2 W−1 and 9.2 × 108 cmHz1/2 W−1 at 1 µm and 1.55 µm, respectively, is also investigated. This work contributes to pave the way towards establishing a Si‐based broadband infrared photonic system operating at room temperature.

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Suppressing the cellular breakdown in silicon supersaturated with titanium

Cited by 22 publications

References 37 publications

On the insulator-to-metal transition in titanium-implanted silicon

On the insulator-to-metal transition in titanium-implanted silicon

Vanadium supersaturated silicon system: a theoretical and experimental approach

Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping

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