2021
DOI: 10.1002/solr.202100791
|View full text |Cite
|
Sign up to set email alerts
|

Suppressing Interfacial Shunt Loss via Functional Polymer for Performance Improvement of Lead‐Free Cs2AgBiBr6 Double Perovskite Solar Cells

Abstract: All‐inorganic lead‐free Cs2AgBiBr6 double perovskite solar cells (PSCs) have attracted growing attention owing to their eco‐friendly features and robust intrinsic stability. However, arising from the rapid crystal growth, the poor film quality always leads to substantial non‐radiative recombination and inferior performance improvement. Herein, high‐efficiency and stable Cs2AgBiBr6 PSCs are obtained by introducing a functional polymethyl methacrylate (PMMA) layer at the perovskite surface to avoid direct contac… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
23
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 23 publications
(23 citation statements)
references
References 67 publications
(98 reference statements)
0
23
0
Order By: Relevance
“…achieved a PCE of 1.77 % and a 1.119 V V OC for pristine Cs 2 AgBiBr 6 , which could be further improved to 2.57 % and 1.177 V by doping the perovskite with small amounts of Li + [40] . Later, the same authors found that the addition of a thin passivating layer of PMMA enhances the PSC performances of pristine Cs 2 AgBiBr 6 (2.25 %, 1.180 V) [41] . Finally, Shao and co‐workers have improved the PCE and V OC of Cs 2 AgBiBr 6 ‐based C‐PSCs from 1.73 % and 1.13 V to 2.22 % and 1.20 V, respectively, by introducing 1‐butyl‐1‐methylpyrrolidinium chloride (BMPyrCl) into the perovskite structure to pin bromide ions, thus inhibiting their migration towards the interface with the CE [45] .…”
Section: Introductionmentioning
confidence: 94%
See 2 more Smart Citations
“…achieved a PCE of 1.77 % and a 1.119 V V OC for pristine Cs 2 AgBiBr 6 , which could be further improved to 2.57 % and 1.177 V by doping the perovskite with small amounts of Li + [40] . Later, the same authors found that the addition of a thin passivating layer of PMMA enhances the PSC performances of pristine Cs 2 AgBiBr 6 (2.25 %, 1.180 V) [41] . Finally, Shao and co‐workers have improved the PCE and V OC of Cs 2 AgBiBr 6 ‐based C‐PSCs from 1.73 % and 1.13 V to 2.22 % and 1.20 V, respectively, by introducing 1‐butyl‐1‐methylpyrrolidinium chloride (BMPyrCl) into the perovskite structure to pin bromide ions, thus inhibiting their migration towards the interface with the CE [45] .…”
Section: Introductionmentioning
confidence: 94%
“…[42] All these approaches aimed at improving the energy level alignment at the perovskite/HTM interface, which emphasizes its crucial role for boosting the V OC . The V OC of PSCs that are based on unmodified Cs 2 AgBiBr 6 has been mostly lower than 1.1 V [9,42,43] and has only surpassed this value when Cu 2 O was applied as an HTM [39] or when CEs were used, [40,41] as it could also be observed for lead-based PSCs. [44] C-PSCs based on the DP have yet been reported only three times: originally, Li et al achieved a PCE of 1.77 % and a 1.119 V V OC for pristine Cs 2 AgBiBr 6 , which could be further improved to 2.57 % and 1.177 V by doping the perovskite with small amounts of Li + .…”
Section: Introductionmentioning
confidence: 96%
See 1 more Smart Citation
“…However, the reason that limits the further improvement of CZTSSe device efficiency is the poor film quality, and the rapid crystal growth leads to substantial non-radiative recombination. Li et al 91 obtained high-quality Cs 2 AgBiBr 6 double perovskite solar cells by introducing a functional polymethylmethacrylate interfacial layer on the absorber layer surface to avoid direct contact between the electron transport layer and carbon layer. Defect reduction implies that the interface recombination-induced energy losses is effectively suppressed within the device, improving the charge transport process within the interface, which will thus be beneficial to increase the device efficiency to 2.05% with a high open-circuit voltage of 1.18 V.…”
Section: New Atfscs: Materials and Devicesmentioning
confidence: 99%
“…As a result, the final optimized device exhibited the superior PCE of 2.84% with improved stability under ambient atmospheric conditions. 21 Besides, Li et al introduced functional polymethyl methacrylate (PMMA) layer on perovskite absorber to suppress the defects and non-radiative recombination which resulted improved PCE of device up to 2.25% with very high V OC of 1.18 V. 22 Savory et al performed the first principle calculation study to evaluate chemical bonding, cation-anti site disorder and physical properties of Cs 2 AgBiX 6 (X = Cl, Br). They have stated the limited device conversion efficiency up to less than 10% for Cs 2 AgBiCl 6 and Cs 2 AgBiBr 6 based lead-free PSCs.…”
Section: Introductionmentioning
confidence: 99%