Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p‐Type Dopability in AgBiSe₂–SnSe Thermoelectrics (Adv. Mater. 38/2022)

Abstract

Thermoelectric Materials In article number 2204132, G. Jeffrey Snyder, Yeon Sik Jung, Min‐Wook Oh, and co‐workers show that charged cation antisites are principal defects forestalling p‐type dopability of AgBiSe2‐based thermoelectric materials via saturation annealing under selenium vapor. This finding offers a rational design rule for stabilizing thermoelectric properties of chalcogenide‐based materials.

Design of High‐Performance Cubic N‐Type AgBiSe2 Guided by Metavalent Bonding Mechanism

“…[14] With increasing Pb content, however, AgBi 0.7 Pb 0.3 Se 2 (cubic) shows strong n-type conductivity in the range from 300 to 800 K. [21] The strong ntype conductivity of cubic AgBiSe 2 -based materials is attributed to the low formation energy of the donor-like Bi-on-Ag antisite defect (Bi Ag ). [30] Ultimately, the PF of all solid solution samples increases monotonically with the increased temperature.…”