Supported growth of sheet silicon from the melt

Crystal Growth through the Ages

“…Some other methods include the ribbon against drop (RAD) method [152], where silicon is deposited as aligned grains on a carbon substrate, and the silicon on ceramic process [153], which is similar to the RAD process except that the substrate is a ceramic material. Some other methods include the ribbon against drop (RAD) method [152], where silicon is deposited as aligned grains on a carbon substrate, and the silicon on ceramic process [153], which is similar to the RAD process except that the substrate is a ceramic material.…”

Large area polycrystalline silicon sheets by Hoxan cast ribbon process

“…Accordingly, the pulling rate is restricted by the growth rate of the crystal, and it is difficult to achieve a high growth rate. RAFT [5] and SOC [ 6 ] were developed to achieve a high production rate. In these methods, pulling direction and crystal growth direction are different.…”