Supersonic jet epitaxy of III-nitride semiconductors

Ferguson, B. A.; Mullins, C. Buddie

doi:10.1016/s0022-0248(97)00080-8

Cited by 19 publications

(6 citation statements)

References 88 publications

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“…The concentration decreases as we reach the end of the substrates. This is consistent with sublimator plume shapes reported in the literature [113,114]. This figure also shows that a considerable amount of Pt was lost during the heat treatment in the furnace at 500ºC.…”

Section: Name and Formulasupporting

confidence: 92%

Plasma enhanced metal organic chemical vapor deposition (PEMOCVD) of catalytic coatings for fuel cell reformers

Dhar

Pedrow

Moeller³

et al.

The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts.

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Mechanical and Materials Engineering for extending the use of their laboratory facilities and providing useful comments. I would like to thank Scott Cornelius and Charles M. Knaack, Department of Geology, for helping me with EDS and ICPMS analysis respectively. I would like to thank Chris Davitt and Valerie Lynch-Holm, Electron Microscopy Center, for providing hands on training on SEM and TEM. I would also iv express my thanks to Dr. Thompson and Anna Sekar Darujati for helping me with XRD. I would also express my gratitude to John Yates, John Grimes and other staff who provided valuable equipment fabrication support. I would like to thank my family, my mom and dad, without whose support I couldn't have accomplished whatever I had to. I know I have missed them a lot especially my dear younger sister Romila, during my stay in Pullman. Lastly, I would like to thank all my friends here in Pullman, especially Satish, Jagan and Ravindra, who really made my stay enjoyable and worthwhile. v

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Section: Name and Formulasupporting

confidence: 92%

Plasma enhanced metal organic chemical vapor deposition (PEMOCVD) of catalytic coatings for fuel cell reformers

Dhar

Pedrow

Moeller³

et al.

The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts.

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“…A review of the epitaxy of group III nitrides by SSJ has been given recently by Ferguson and Mullins. 7 In this letter, we describe in situ real-time observations of GaN homoepitaxy by SSJ using a low-energy electron microscope ͑LEEM͒. 8 The experimental parameters, i.e., substrate preparation, growth temperature, and flux ratio, leading to smooth basal plane ͑0001͒ growth, were explored and determined in our LEEM studies.…”

mentioning

confidence: 99%

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

Pavlovska

Torres

Bauer

et al. 1999

Applied Physics Letters

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A study of the homoepitaxial growth of GaN͑0001͒ layers was conducted in situ and in real time using the low-energy electron microscope. The Ga flux was supplied by an evaporative cell while the NH 3 flux was supplied via a seeded-beam supersonic jet source. At growth temperatures of 665°C and 677°C, smooth GaN͑0001͒ layers with well-defined step structures were grown on GaN͑0001͒ substrates prepared by metalorganic chemical vapor deposition. In general, nonfaceted homoepitaxial layers were achieved when the Ga/NH 3 flux ratios exceeded 2, starting with a Ga-covered substrate surface, in the temperature range of 655-710°C.

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“…77 Because of their high flux and unique nonequlibrium growth capabilities, supersonic jets are highly attractive for exploration of group III nitride thin film growth. 78 The most successful growth methods for Al and Ga nitride growth are based on some form of chemical decomposition of the group III and the nitrogen precursors. 79 The typical precursors for Al and GaN growth are the group III trialkyl compounds, MeR 3 (Me = Al,Ga; R = Methyl,Ethyl) in combination with NH 3 .…”

Section: Aluminum and Gallium Nitridementioning

confidence: 99%

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Eres

1998

Critical Reviews in Solid State and Materials Sciences

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Supersonic jet epitaxy of III-nitride semiconductors

Cited by 19 publications

References 88 publications

Plasma enhanced metal organic chemical vapor deposition (PEMOCVD) of catalytic coatings for fuel cell reformers

Plasma enhanced metal organic chemical vapor deposition (PEMOCVD) of catalytic coatings for fuel cell reformers

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

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