The formation of Cu 3 Si phase, and the subsequent crystallization of the remaining amorphous Si were observed in the Cu/a-Si bilayer under thermal and laser pulse annealing. The crystallization temperature of the a-Si layer with a thin Cu underlayer was reduced to 485 C due to the formation of Cu 3 Si precipitates that serve as nucleation sites for the crystallization of the remaining amorphous Si. At the wavelength of 405 nm, the Cu/a-Si bilayer exhibited an optical contrast of 15.4% and an absorptance of 47% providing high readability and adequate recording sensitivity. Moreover, the maximum data-transfer-rates that can be achieved by the Cu/a-Si bilayer at recording powers of 6, 8, and 10 mW were estimated to be approximately 23, 46, and 223 Mb/s, respectively. It is evident that the Cu/a-Si bilayer shows great feasibility for high data-transfer-rate writeonce blue-ray recording.