“…GaN-based light sources for the entire spectra of infrared to ultraviolet wavelengths are being investigated to understand various fundamental material and physical properties and their applications. − GaN-based nanostructures are the natural choices for the additional degree of freedom provided by quantum confinement. Among various reduced dimensional structures, quantum wells (QWs), − lateral and vertical quantum nanowires, − and quantum dots (QDs) − are more frequently used for their reproducibility in growth, ease of device fabrication on these structures, and physical properties. QDs provide many significant advantages, including higher gain through impulse like density-of-states, higher strain relaxation, indium- and aluminum-rich heterostructures for longer and shorter wavelengths, bridging the green gap, larger surface to volume ratio, improved external quantum efficiency, and potential use in quantum technology as a single-photon source. − The QD light-emitting diodes using the most popular InGaN/GaN heterostructures are being investigated in various forms, and they have been proven to demonstrate superior light-emitting characteristics in various aspects. − Most of the studies are based on continuous wave emission characteristics, and few of them have reported transient luminescence characteristics. − The QDs are also frequently grown epitaxially in the form of an array where they are laterally coupled through the barrier layer.…”