2012 38th IEEE Photovoltaic Specialists Conference 2012
DOI: 10.1109/pvsc.2012.6318247
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Superior radiation and dislocation tolerance of IMM space solar cells

Abstract: High efficiency space solar cells based on the GaInP 2 /InGaAs/Ge triple junction lattice matched device with 1 sun, AM0 efficiencies of approximately 30% are commercially available from several companies. Multiple approaches have been suggested for significantly surpassing the 30% efficiency level, but achieving this in a commercially viable cell has not been easy. We review those approaches, pointing out the advantages and challenges of each. SolAero has been focused on developing the inverted metamorphic mu… Show more

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Cited by 8 publications
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“…Equation ( 14) is also used for p-n devices if the intrinsic region of the p-i-n device is considered as a depletion region of a p-n device. Using the solution of the drift-diffusion equations, as well as depletion region approximation for minority charge carriers, we could obtain various currents for a p-i-n device whose schematic representation is as shown in figure 2 [32][33][34]. In this work, the major focus will be on the devices which have a bulk layer or MQWs (both symmetries and asymmetric) structures inside the intrinsic region.…”
Section: Drift-diffusion Calculation Of Gap-based P-i-n Solar Cells W...mentioning
confidence: 99%
“…Equation ( 14) is also used for p-n devices if the intrinsic region of the p-i-n device is considered as a depletion region of a p-n device. Using the solution of the drift-diffusion equations, as well as depletion region approximation for minority charge carriers, we could obtain various currents for a p-i-n device whose schematic representation is as shown in figure 2 [32][33][34]. In this work, the major focus will be on the devices which have a bulk layer or MQWs (both symmetries and asymmetric) structures inside the intrinsic region.…”
Section: Drift-diffusion Calculation Of Gap-based P-i-n Solar Cells W...mentioning
confidence: 99%