Superhigh-power picosecond optical pulses from Q-switched diode laser

Portnoĭ, E. L.; Venus, George; Khazan, A.A.; Gadjiev, I.M.; Shmarcev, A.Yu.; Frahm, J.; Kühl, D.

doi:10.1109/2944.605666

Cited by 29 publications

(14 citation statements)

References 6 publications

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“…Малеев.. ляется использование в полупроводниковых лазерах режима пассивной модуляции добротности или синхронизации мод, что приводит к работе лазера в режиме самопульсаций и позволяет получать пикосекундные световые импульсы при накачке лазера импульсами тока произвольной длительности. Для реализации режима самопульсаций необходимо по-местить в лазерный резонатор насыщающийся поглотитель [4]. В на-стоящее время опубликовано значительное число экспериментальных и теоретических работ [5][6][7], в которых обсуждаются условия достижения режима самопульсаций как в полосковых торцевых полупроводниковых лазерах, так и в вертикально-излучающих лазерах (ВИЛ), где для ограничения тока инжекции используется ионная имплантация или се-лективное окисление, что обеспечивает формирование насыщающегося поглотителя в непрокачиваемой части активной области.…”

Section: поступило в редакцию 31 июля 2017 гunclassified

Обострение оптических импульсов в вертикально-излучающих лазерах с активной областью на основе субмонослойных квантовых точек InGaAs

Дюделев¹,

Малеев²,

Кузьменков³

et al. 2017

Письма В Журнал Технической Физики

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-1 Представлены результаты исследований вертикально-излучающих лазеров на основе субмонослойных квантовых точек InGaAs с оксидной апертурой диаметром ~ 1 mum. Продемонстрирована возможность обострения выходных оптических импульсов до 50-100 ps при накачке электрическими импульсами длительностью 10-100 ns с частотой повторения 10-100 kHz. DOI: 10.21883/PJTF.2017.24.45336.16992

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Section: поступило в редакцию 31 июля 2017 гunclassified

Обострение оптических импульсов в вертикально-излучающих лазерах с активной областью на основе субмонослойных квантовых точек InGaAs

Дюделев¹,

Малеев²,

Кузьменков³

et al. 2017

Письма В Журнал Технической Физики

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“…Practical applications which would benefit from the development of a high-speed semiconductor device of this kind are advanced radars with high single-shot resolution 1 , precise 3 D imaging 2 , laser tomography, time imaging spectroscopy, etc. It would also be fairly attractive to use this switch for feeding the recently suggested picosecond laser diodes 3 and others 4 . High-speed (ps-range) high voltage pulses could be used in electro-optical and electron beam shutters, streak-camera sweep modules, etc.…”

Section: Introductionmentioning

confidence: 99%

Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains

Vainshtein

Yuferev

Kostamovaara

2004

Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

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Superfast high current switching of a GaAs-based JBT in the avalanche mode has been achieved experimentally for the first time. A very fast reduction in the voltage across the transistor was observed (~ 200-300 ps) and the amplitude of the current pulses ranged from 2 to 130 A depending on the load resistance. It was observed experimentally that the switching occurs in a number of synchronized current channels with a characteristic diameter of ≤ 10 microns. A 1D simulation code was developed and the switching transient for a single channel was simulated, with the external circuit incorporated into the simulations. Photon-assisted carrier transport and negative differential electron mobility were taken into account in the theoretical model. The former does not play an appreciable role in the 1D switching transient, although the latter determines superfast switching at extreme current densities (> 1 MA/cm 2 ). Superfast switching occurs due to the appearance of a number of Gunn domains at any instant (up to ~ 20 domains across a collector region ~30 microns in thickness). These domains of huge amplitude (up to ~700 kV/cm) are moving towards the cathode and give rise to extremely high ionization rates across the volume of the channel in the n 0 collector region. The simulations provide a fairly reliable interpretation of the experimentally observed switching time, which is shorter than that in Si avalanche transistors by a factor of ~15. The new device is fairly attractive, e.g. for feeding pulsed laser diodes when the current rise time should be shorter than the lasing delay.

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“…Another problem lies in the problematic wavelength control for this old-fashioned technology. The well-known method of saturable absorber formation by heavy ion implantation to mirrors, 8 or alternatively multi-section ion implantation, 9 seems to be applicable to various diode structures, but this requires a precise technique and the question of the reliability of operation of the implanted diode in practical systems apparently remains open. We propose here a new double-heterostructure (DH) laser diode in which high-power optical pulse generation in the picosecond range is achieved by means of electric field-induced gain control.…”

Section: Introductionmentioning

confidence: 99%

First observation of the short-pulsing Q-switching mode in a double-heterostructure laser diode without ion implantation

Vainshtein

Sverdlov²,

Shestak³

et al. 2002

SPIE Proceedings

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A double heterostructure (DH) laser has been developed and tested with the aim of achieving high-power picosecond optical pulses in the near-infrared range for use in advanced laser radars and other applications. The physical idea consists of achieving fast gain control by means of temporal evolution of the electric field in the active region. The gain is controlled by the variation in current due to transformation in the built-in electric field across the active region, provided that a high current density is used for pumping. This transformation broadens the carrier energy distribution in the active region, thus suppressing lasing until the current pulse stops. The resulting carrier accumulation causes an enlargement in the power of the short-pulsing Q-switching mode. One of the most important features of the laser structure is the placement of the electron injector well outside the two hetero-barriers forming the active region. Three transient lasing modes were observed simultaneously in this laser diode, with a maximum difference in wavelength as large as 60 nm. One of them, a 45 W/ 25 ps Q-switching mode which appears near the trailing edge of the current pulse, being spectrally separated from the other two. A significant further increase in the power of the Q-switching mode can be expected from an optimized laser structure with two parasitic modes completely suppressed. The new laser structure produces much more powerful picosecond pulses than are obtainable from gain-switched lasers and allows lasing wavelength control by means of bandgap engineering.

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Superhigh-power picosecond optical pulses from Q-switched diode laser

Cited by 29 publications

References 6 publications

Обострение оптических импульсов в вертикально-излучающих лазерах с активной областью на основе субмонослойных квантовых точек InGaAs

Обострение оптических импульсов в вертикально-излучающих лазерах с активной областью на основе субмонослойных квантовых точек InGaAs

Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains

First observation of the short-pulsing Q-switching mode in a double-heterostructure laser diode without ion implantation

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