Superhigh power picosecond optical pulses from Q-switched diode laser

Portnoĭ, E. L.; Venus, George; Khazan, A.A.; Gadjiev, I.M.; Shmarcev, A.Yu.; Frahm, J.; Kühl, D.

doi:10.1109/islc.1996.558777

Cited by 3 publications

(4 citation statements)

References 5 publications

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“…Upon near-infrared (IR) radiation with nanosecond or femtosecond pulses, the nonlinear interaction between the applied optical field and ZnO nanostructures leads to the simultaneous absorption of two or more photons of subbandgap energy through a virtual-state assisted interband transition, producing electron-hole pairs in the excited states and, subsequently, the band-edge emission via their radiative recombination [7][8][9]. Near-IR light pulses are readily produced with inexpensive, (In,Al,Ga)(As,P) laser diodes [10,11], allowing for the chip-level design and low-cost implementation of ZnO nanolasers in photonic circuitries and sensing systems.…”

Section: Introductionmentioning

confidence: 99%

Low-threshold two-photon pumped ZnO nanowire lasers

et al. 2009

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We report in this communication the two-photon absorption (TPA)-induced room-temperature lasing performance of ZnO nanowires. Under femtosecond pulse-excitation at lambda = 700 nm in the infrared regime, a remarkably low threshold of 160 microJ/cm(2) was observed for the TPA-induced lasing action, which is of the same order of magnitude as that measured for the linear lasing process. Time-resolved photoluminescence characterization of two-photon pumped ZnO nanowires reveals the presence of a fast decay (3-4 ps) in the stimulated emission as compared to the slow decay (50-70 ps) for the spontaneous emission. The TPA process in ZnO nanowires was characterized with the nonlinear transmission measurement, which uncovers an enhanced TPA coefficient, about 14.7 times larger than that of bulk ZnO samples. The observed TPA enhancement in ZnO nanowires accounts for the low threshold lasing behavior, and has been attributed to the intensified optical field confined within the nanowire waveguides.

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Section: Introductionmentioning

confidence: 99%

Low-threshold two-photon pumped ZnO nanowire lasers

et al. 2009

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“…Applied for the commercial single-heterostructure ͑SH͒ wide-strip laser LD-62 ͑Laser Diode, Inc.͒, this method has recently allowed a 40 ps/380 W single pulse to be achieved. 1 An alternative option for intensive picosecond-range pulse generation which does not need any special laser treatment is to make use of intrinsic saturable absorption in the strongly compensated semiconductor material of a SH laser diode. 2 The possibility of obtaining the optical pulses with a peak power of over 100 W and a duration of around 50 ps by simple adjustment of the pumping and temperature conditions has aroused intensive discussions lately.…”

Section: Introductionmentioning

confidence: 99%

“…2 The possibility of obtaining the optical pulses with a peak power of over 100 W and a duration of around 50 ps by simple adjustment of the pumping and temperature conditions has aroused intensive discussions lately. [2][3][4] The corresponding lasing mode is attributed to the well-known internal Q-switching phenomenon, 5 but the question remains open as to whether the physical reason for this effect is associated with diffraction losses in the cavity, 1,4,6 or whether it is saturable absorption 2,5,7,8 and carrier heating 2 that play the dominant role.…”

Section: Introductionmentioning

confidence: 99%

Spectral filtering for time isolation of intensive picosecond optical pulses from a Q-switched laser diode

Vainshtein¹,

Kostamovaara²

1998

Journal of Applied Physics

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A significant wavelength separation is found between the shot-pulsed mode and stationary lasing in the emission band of a Q-switched single-heterostructure laser. This feature allowed a 35 ps/100 W single optical pulse to be achieved by means of band-pass optical filtering. An attendant long-duration optical response, attributed to optical transitions with at least one localized tail state involved, is suppressed by a factor of 104 as compared with the peak power of the single picosecond pulse. A complicated time-resolved spectrum is interpreted in terms of a qualitative model involving saturable absorption and carrier heating.

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“…1,2 The absorber is formed in this case by the implantation of heavy ions of high energy through the laser mirror, thus creating a region with an extremely short carrier lifetime. This absorbing area operates as an optical shutter which augments the energy that accumulates in the laser cavity and suppresses long-duration light emission followed by a short spike.…”

Section: Introductionmentioning

confidence: 99%

Deriving of single intensive picosecond optical pulses from a high-power gain-switched laser diode by spectral filtering

Vainshtein

Simin

Kostamovaara

1998

Journal of Applied Physics

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Single 25 ps/16 W optical pulses were achieved by spectral filtering from a multiheterostructure gain-switched laser diode with its quasisteady-state modes suppressed by a factor of 103 as compared with the peak power. A significant transient spectrum broadening makes this possible provided that a very high dI/dt rate of the pumping current pulse is used. A simple numerical model is suggested which describes adequately both the spectral and transient features of the observed phenomenon. It follows from the model that single picosecond optical pulses can be obtained from any type of high power semiconductor laser.

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Superhigh power picosecond optical pulses from Q-switched diode laser

Cited by 3 publications

References 5 publications

Low-threshold two-photon pumped ZnO nanowire lasers

Low-threshold two-photon pumped ZnO nanowire lasers

Spectral filtering for time isolation of intensive picosecond optical pulses from a Q-switched laser diode

Deriving of single intensive picosecond optical pulses from a high-power gain-switched laser diode by spectral filtering

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