Supercurrent Induced by Chiral Coupling in Multiferroic/Superconductor Nanostructures

Niedzielski, Bjoern; Jia, Chenglong; Berakdar, Jamal

doi:10.3390/nano11010184

Cited by 4 publications

(3 citation statements)

References 42 publications

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“…Two-dimensional (2D) materials have attracted extensive attention due to their distinctive physical and material properties and the potential application on account of monolayer limit [1][2][3][4][5][6][7][8][9]. As a typical representative, graphene has been widely expected to be a proper material for the preparation of a new generation of nanoelectronic devices due to remarkable high carrier mobility, but its zero bandgap reminds us that it may not be an effective solution [1,10,11].…”

Section: Introductionmentioning

confidence: 99%

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

et al. 2021

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Very recently, two new two-dimensional (2D) layered semi-conducting materials MoSi2N4 and WSi2N4 were successfully synthesized in experiments, and a large family of these two 2D materials, namely MA2Z4, was also predicted theoretically (Science, 369, 670 (2020)). Motivated by this exciting family, in this work, we systematically investigate the mechanical, electronic and optical properties of monolayer and bilayer MoSi2P4 and MoSi2As4 by using the first-principles calculation method. Numerical results indicate that both monolayer and bilayer MoSi2Z4 (Z = P, As) present good structural stability, isotropic mechanical parameters, moderate bandgap, favorable carrier mobilities, remarkable optical absorption, superior photon responsivity and external quantum efficiency. Especially, due to the wave-functions of band edges dominated by d orbital of the middle-layer Mo atoms are screened effectively, the bandgap and optical absorption hardly depend on the number of layers, providing an added convenience in the experimental fabrication of few-layer MoSi2Z4-based electronic and optoelectronic devices. We also build a monolayer MoSi2Z4-based 2D optoelectronic device, and quantitatively evaluate the photocurrent as a function of energy and polarization angle of the incident light. Our investigation verifies the excellent performance of a few-layer MoSi2Z4 and expands their potential application in nanoscale electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

et al. 2021

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“…Here, we investigate if such a transient dynamic state can also be created with the aid of a structured THz field pulse. The external current is introduced into our system by solving the continuity equation with and boundary conditions where and are the SC/vacuum and SC/electrode boundaries, and and are the corresponding surface normals 45 . In our case the external current flows along the y -direction and the superconductor/electrode boundaries are located at nm.…”

Section: Discussionmentioning

confidence: 99%

Spatio-temporal superconducting dynamics driven by THz fields from topological spintronic terahertz emitters

Niedzielski

Schulz

Berakdar

2022

Sci Rep

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Metastructures of spintronic THz emitters can be engineered to have a well-defined topology characterized by a topological charge. The emitted THz radiation possesses a phase-locked transversal and longitudinal components with the ratio of which being tunable by the topological charge of the underlying metastructure. The THz fields so produced are employed to drive and spatio-temporally modulate the superconducting order parameter in a type II superconductor. Using a time-dependent Landau-Ginzburg approach, it is demonstrated how the topology of the THz fields is reflected in a texturing of the superconducting phase and density. Full numerical simulations illustrate the emergence and the nanoscale steering of Abrikosov vortices as well as the local modification of the superconducting density and transport properties of nanoscale samples with different geometries. The study highlights the potential of metamaterials based on spintronic THz emitters as a coherent source for spatially and vectorially modulated THz radiation.

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“…Under an electric bias fluxons may cause a finite resistance and therefore efforts are made to control their motion. [ 5–13 ]

{boldj}_{s}

, which is intimately related to variations in the phase

φ_{s}

of the SC order parameter, can also be induced by an electric bias applied to Ohmic contacts to the SC. The question of interest here is whether we can act directly and in a time‐resolved way on

φ_{s}

without magnetic fields or wiring to diffusive contacts.…”

Section: Introductionmentioning

confidence: 99%

Vortex Ring and Helical Current Formation in Superconductors Driven by a THz‐Field‐Induced Toroidal Vector Potential

Niedzielski

Berakdar

2022

Physica Status Solidi (b)

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Herein, the vortex dynamics in a type II superconducting torus driven by a curl‐free vector potential corresponding to a toroidal moment is studied, which is triggered within picoseconds in an enclosed semiconductor by polarization‐structured THz vector field pulses. Numerical simulations of the time‐dependent Ginzburg–Landau equation in the presence of the toroidal vector potential evidence the formation of vortex ring structures that depend on the toroidal moment strength with a behavior resembling the Little–Parks effect. Applying in addition a static external magnetic flux density, the induced textures in the superconducting phase can be stabilized and steered to form stripe domains with corresponding helical supercurrent density.

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Supercurrent Induced by Chiral Coupling in Multiferroic/Superconductor Nanostructures

Cited by 4 publications

References 42 publications

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Spatio-temporal superconducting dynamics driven by THz fields from topological spintronic terahertz emitters

Vortex Ring and Helical Current Formation in Superconductors Driven by a THz‐Field‐Induced Toroidal Vector Potential

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