Supercritical CO 2 for high resolution photoresist development

Felix, Nelson; Tsuchiya, Kousuke; Luk, Camille Man Yin; Ober, Christopher K.

doi:10.1117/12.656523

Cited by 2 publications

(4 citation statements)

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Section: Introductionmentioning

confidence: 99%

“…The unique sustainable photoresists represent a promising alternative for semiconductor manufacturing. Some new photoresists developed with environmentally friendly supercritical CO 2 (scCO 2 ) [16][17][18][19] or water [20][21][22][23] have been reported. Ober et al used scCO 2 as the developer of molecular glass photoresists 16,17,19 and polymer photoresists 18,19 due to its low surface tension, high diffusivity, and tunable solvent power.…”

Section: Introductionmentioning

confidence: 99%

“…Some new photoresists developed with environmentally friendly supercritical CO 2 (scCO 2 ) [16][17][18][19] or water [20][21][22][23] have been reported. Ober et al used scCO 2 as the developer of molecular glass photoresists 16,17,19 and polymer photoresists 18,19 due to its low surface tension, high diffusivity, and tunable solvent power. Some water developable photoresists, such as polyaniline incorporated with cross-linkable functionality, 20 polyvinyl alcohol (PVA) mixed with an oxidizing metal salt, 21,22 and poly(sodium 4-styrenesulfonate), 23 have been reported.…”

Section: Introductionmentioning

confidence: 99%

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Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Wang

Chen

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Non-chemically amplified resist (n-CAR) shows great potential as a unique lithographic material because it avoids some disadvantages of CAR, such as post-exposure instability and acid diffusion. Furthermore, since toxic and flammable developers are widely used in semiconductor manufacturing, the implementation of innovative environmentally friendly waterdevelopable photoresists is of interest.Aim: A unique n-CAR, which could be developed with an environmentally friendly developer, was prepared for electron beam (e-beam) lithography (EBL) and extreme ultraviolet lithography (EUVL).Approach: A polymer containing radiation/photosensitive sulfonium triflate group (PSSF) was synthesized and characterized by infrared, 1 H NMR, and gel permeation chromatography. The lithography performance of the PSSF photoresist was evaluated by EBL and EUVL. The patterns were analyzed with scanning electron microscope and atomic force microscope. Results:The PSSF photoresist can be used in EBL and EUVL. Post-exposure bake had no significant effect on the resolution of photoresist. Development in water should be kept at an appropriate time of 30 s to obtain the repeatable and high-resolution patterns. It shows a similar sensitivity to polymethyl methacrylate but higher contrast. Conclusions:The PSSF acts as n-CAR, and 20 nm line patterns and 35 nm 1:1 line/space patterns were achieved in EBL and EUVL, respectively. It can be developed in pure water with high contrast (γ ¼ 5.49).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Wang

Chen

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

View full text Add to dashboard Cite

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“…Initially CO 2 was used to either dry or mechanically remove the rinse solution at a low surface tension, but the development times were too long for industry interest. − Later investigations led to direct photoresist development with a scCO 2 -based development solution, which was a more efficient approach to utilizing the beneficial properties of scCO 2 in lithography. Previous work in this area focused on the synthesis and use of novel photoresists that have been modified to increase their solubility in CO 2 , usually through incorporation of fluorinated groups or by a reduced molar mass. − Industrial interest in this area has been limited, however, since the studies used untested resist systems and significant improvements in the reduction of pattern collapse were not observed.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Extreme Ultraviolet Photoresist Development with a Supercritical CO₂ Compatible Salt

Zweber

Wagner²,

DeYoung

et al. 2009

Langmuir

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The mechanism of developing an extreme ultraviolet (EUV) commercial photoresist with supercritical carbon dioxide (scCO2) and a CO2 compatible salt (CCS) solution was studied. The cloud point of CCS in CO2 and the pressure at which the photoresist dissolves in CCS/scCO2 were determined for temperatures between 35 and 50 degrees C. For this temperature range, it was found that the CCS cloud point ranges between 11.2 and 16.1 MPa, while the photoresist dissolution point ranges from 15.5 to 21.3 MPa. The kinetics of the CCS/scCO2 development was modeled using a simplified rate equation, where the rate-limiting steps were photoresist dissolution and mass transfer. The effects of temperature, mass transfer, pressure, and CCS concentration on photoresist removal rate were further explored experimentally using a high-pressure quartz crystal microbalance (QCM). Increasing temperature (35-50 degrees C) at a constant fluid density of 0.896 g/mL was found to increase the removal rate following an Arrhenius behavior with a photoresist dissolution energy of activation, Ea, equal to 79.0 kJ/mol. The removal was zero order in CCS concentration, signifying photoresist phase transfer, photoresist mass transfer, or both were rate limiting. Mass transfer studies showed that circulation enhanced the photoresist removal rate, but that the mass transfer coefficient was independent of temperature from 35 degrees C to 50 degrees C. In pressure studies, increasing pressure (27.6-34.5 MPa) at a constant temperature of 40 degrees C increased the removal rate by enhancing the fluid density, but at 50 degrees C increasing pressure had little effect on the removal rate. When the total CCS concentration was in large global excess over the number of Bronsted acid groups in the polymer (2400:1 at 5 mM CCS concentration), the mass of photoresist removed varied linearly with time. At lower CCS concentrations but still in global excess of the number of Bronsted acid groups, the photoresist removal slowed (0.5 mm CCS, approximately 240:1) or was prevented (0.03 Mm CCS, approximately 15:1) due to partitioning of the CCS between the CO(2)-rich phase and the film. The CCS partitioning into the resist was found to decrease with increasing temperature, revealing an enthalpy-driven CCS absorption.

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Supercritical CO 2 for high resolution photoresist development

Cited by 2 publications

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Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Mechanism of Extreme Ultraviolet Photoresist Development with a Supercritical CO₂ Compatible Salt

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Supercritical CO 2 for high resolution photoresist development

Cited by 2 publications

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Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Mechanism of Extreme Ultraviolet Photoresist Development with a Supercritical CO2 Compatible Salt

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Mechanism of Extreme Ultraviolet Photoresist Development with a Supercritical CO₂ Compatible Salt