Superconductivity in the orthorhombic phase of thermoelectric CsPbxBi4−xTe6 with 0.3≤x≤1.0

Zhang, R.X.; Yang, H. X.; Tian, Huanfang; Chen, G.F.; Wu, Shao-Yi; Wei, Lu; Li, J.Q.

doi:10.1016/j.jssc.2015.08.050

Cited by 8 publications

(11 citation statements)

References 15 publications

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“…Like many binary chalcogenides, CsBi 4 Te 6 is also a narrow gap semiconductor with an energy gap of B0.08 eV 10 and turns into a superconducting state below a transition temperature (T c ) of 4.4 K under hole doping by Cs vacancies or by Bi impurities, with superconducting volume fractions up to B20%. 11 Very recently bulk superconductivity was found in Pb-substituted CsBi 4Àx Pb x Te 6 (x = 0.3-1.0) with maximum T c B 3.1 K. 12 Incidentally, structural symmetry of CsBi 4Àx Pb x Te 6 changes from monoclinic to orthorhombic for x Z 0.3 that involves disappearance of Bi-Bi bond as shown in Fig. 1(c).…”

Section: Introductionmentioning

confidence: 98%

Determination of the local structure of CsBi_4−xPb_xTe₆ (x = 0, 0.5) by X-ray absorption spectroscopy

Wakita

Paris

Mizokawa

et al. 2016

Phys. Chem. Chem. Phys.

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We have studied the local structure and valence electronic unoccupied states of thermoelectric CsBiTe and superconducting CsBiPbTe (T ∼ 3 K) by extended X-ray absorption fine structure (EXAFS) and X-ray absorption near edge structure (XANES) measurements. The Bi-L edge EXAFS reveals wide Bi-Te distance distribution for both compounds indicating complex atomic arrangements in the studied system. The mean square relative displacements (MSRDs) of the Bi-Te bond distances appear largely increased in Pb substituted system due to larger overall local disorder, however, one of the Bi-Te bonds shows a reduced disorder. On the other hand, the Bi-L edge XANES is hardly affected by Pb substitution while the Te-L edge XANES reveals increased density of unoccupied Te 5p states. This suggests that the carriers introduced by the Pb substitution in CsBiPbTe preferentially goes on Te sites. Similarly, the Cs-L edge XANES also shows small changes due to Pb-substitution and reduced local disorder indicated by the reduced width of the Cs-L edge white line. We have also shown that the X-ray photoemission spectroscopy (XPS) measurements on various electronic core levels are in a qualitative agreement with the XANES results. These findings are consistent with carrier doping and a reduced disorder in one direction to be likely factors to drive the thermoelectric CsBiTe into a bulk superconductor by Pb-substitution in CsBiPbTe.

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Section: Introductionmentioning

confidence: 98%

Determination of the local structure of CsBi_4−xPb_xTe₆ (x = 0, 0.5) by X-ray absorption spectroscopy

Wakita

Paris

Mizokawa

et al. 2016

Phys. Chem. Chem. Phys.

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“…The discovery of high-temperature superconductor Y-Ba-Cu-O in 1987 has stimulated the intensity of scientists in development of the superconducting application theoretically [1]. YBa2Cu3O7-δ (YBCO) superconducting oxides are expected to be used in many technological applications such as magnetic levitation, high-field magnets, magnetic shields, motors and generators, because of their high critical current density (Jc) at 77 K and a high magnetic field [2]. There has been a considerable interest [3][4] in the preparation of good quality Y-Ba-Cu-O superconductors [5].…”

Section: Introductionmentioning

confidence: 99%

Investigation of physical and structural properties of cs doped y1ba2cu3o7 superconductors

Bağ

Nezir

2021

Cumhuriyet Science Journal

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In this work, YBa2-xCsxCu3O7-δ (x= 0.05, 0.1, 0.2 and 0.3 wt. %) samples were prepared by using solid state reaction method. Some electrical, physical and structural properties of these compounds were examined by using SEM (scanning electron microscopy), XRD (X-ray diffraction), electrical resistivity, critical current density and AC susceptibility measurements, respectively. On the basis of the SEM measurements, it would seem that increasing the amount of Cs doping, the porous structures decrease and the grain size increases up to approximately 50 μm. Unit cell parameters were calculated by employing XRD measurements. On the basis of the data obtained from X-ray diffraction, Cs atoms displaced Ba atoms in the crystal structure. From the measurements of electrical resistivity at 80 K-120 K temperature, it was determined that the highest transition temperature was 91.5 K after addition of 0.05 wt. % Cs. The critical transition temperature was decreased by increasing the amount of Cs doping. Critical current density measurements on the same samples showed that as the amount of Cs doping increases, the values of Jc decrease. AC magnetic susceptibility measurements showed a sharper transition to the superconducting state in YBa2-xCsxCu3O7-δ (x= 0.05, 0.1, 0.2 and 0.3 wt.%) samples with the increase in the additive amount.

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“…The microstructures of both thermoelectric materials and superconductors have considerable influences on their physical properties. − Typical thermoelectric examples are embedded nanoscale precipitates in bulk materials that scatter heat-carrying phonons, e.g., PbTe-SrTe , and PbS-PbTe, which reduce κ to enhance ZT. High power factors have been realized in the CoSb 3 skutterudites by adjusting the total filling fraction of fillers in the nanoscale cages with different charge states; in addition, lattice thermal conductivity can also be significantly reduced .…”

Section: Introductionmentioning

confidence: 99%

Structural Channels and Atomic-Cluster Insertion in Cs_xBi₄Te₆ (1 ≤ x ≤ 1.25) As Observed by Aberration-Corrected Scanning Transmission Electron Microscopy

et al. 2016

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Microstructural analyses based on aberration-corrected scanning transmission electron microscopy (STEM) observations demonstrate that low-dimensional CsBiTe materials, known to be a novel thermoelectric and superconducting system, contain notable structural channels that go directly along the b axis, which can be partially filled by atom clusters depending on the thermal treatment process. We successfully prepared two series of CsBiTe single-crystalline samples using two different sintering processes. The CsBiTe samples prepared using an air-quenching method show superconductivity at approximately 4 K, while the CsBiTe with the same nominal compositions prepared by slowly cooling are nonsuperconductors. Moreover, atomic structural investigations of typical samples reveal that the structural channels are often empty in superconducting materials; thus, we can represent the superconducting phase as CsBiTe with considering the point defects in the Cs layers. In addition, the channels in the nonsuperconducting crystals are commonly partially occupied by triplet Bi clusters. Moreover, the average structures for these two phases are also different in their monoclinic angles (β), which are estimated to be 102.3° for superconductors and 100.5° for nonsuperconductors.

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Superconductivity in the orthorhombic phase of thermoelectric CsPbxBi4−xTe6 with 0.3≤x≤1.0

Cited by 8 publications

References 15 publications

Determination of the local structure of CsBi_4−xPb_xTe₆ (x = 0, 0.5) by X-ray absorption spectroscopy

Determination of the local structure of CsBi_4−xPb_xTe₆ (x = 0, 0.5) by X-ray absorption spectroscopy

Investigation of physical and structural properties of cs doped y1ba2cu3o7 superconductors

Structural Channels and Atomic-Cluster Insertion in Cs_xBi₄Te₆ (1 ≤ x ≤ 1.25) As Observed by Aberration-Corrected Scanning Transmission Electron Microscopy

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Superconductivity in the orthorhombic phase of thermoelectric CsPbxBi4−xTe6 with 0.3≤x≤1.0

Cited by 8 publications

References 15 publications

Determination of the local structure of CsBi4−xPbxTe6 (x = 0, 0.5) by X-ray absorption spectroscopy

Determination of the local structure of CsBi4−xPbxTe6 (x = 0, 0.5) by X-ray absorption spectroscopy

Investigation of physical and structural properties of cs doped y1ba2cu3o7 superconductors

Structural Channels and Atomic-Cluster Insertion in CsxBi4Te6 (1 ≤ x ≤ 1.25) As Observed by Aberration-Corrected Scanning Transmission Electron Microscopy

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Determination of the local structure of CsBi_4−xPb_xTe₆ (x = 0, 0.5) by X-ray absorption spectroscopy

Determination of the local structure of CsBi_4−xPb_xTe₆ (x = 0, 0.5) by X-ray absorption spectroscopy

Structural Channels and Atomic-Cluster Insertion in Cs_xBi₄Te₆ (1 ≤ x ≤ 1.25) As Observed by Aberration-Corrected Scanning Transmission Electron Microscopy