Abstract:International audienceA historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite … Show more
“…After hyperdoping the TO phonon mode of Ge-Ge vibrational is shifted down to 288.2 cm -1 for the Al doped sample and down to 281.9 cm -1 for the Ga doped Ge. This is very close to the theoretically predicted values for the high frequency 13 of the zone-center optical mode in hyperdoped Ge (about 278 cm -1 ). The shift of the TO phonon mode in ultra-high doped Ge and the peak asymmetry is due to the phonon softening and the Fano effect [42][43][44].…”
Section: Model Calculations For the Electron-phonon Couplingsupporting
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10 21 cm -3 . Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al-and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.
“…After hyperdoping the TO phonon mode of Ge-Ge vibrational is shifted down to 288.2 cm -1 for the Al doped sample and down to 281.9 cm -1 for the Ga doped Ge. This is very close to the theoretically predicted values for the high frequency 13 of the zone-center optical mode in hyperdoped Ge (about 278 cm -1 ). The shift of the TO phonon mode in ultra-high doped Ge and the peak asymmetry is due to the phonon softening and the Fano effect [42][43][44].…”
Section: Model Calculations For the Electron-phonon Couplingsupporting
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10 21 cm -3 . Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al-and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.
“…As shown in Fig.1(b), it indicates that n-dependences of T c obtained by theory are far from that of experiments, even if we use negative µ * . [25] As long as a constant µ * is adopted to Eq.1, it is difficult to explain n-dependences of T c . This result suggests that we need to change the traditional interpretation of µ * .…”
We examine the Coulomb pseudopotential µ * in the McMillan equation applying to the superconductivity of heavily doped semiconductors. Systematic calculation using the first-principles calculation suggests that µ * should be considered as a variable quantity depending on carrier density n in semiconductors, although it is usually considered as a constant about 0.1. To clarify n−dependence of µ * , we solve the McMillan equation inversely for µ * by combining the result of the first-principles calculation and that of experiments. It indicates that µ * decreases with n and becomes negative under n ∼ 5 × 10 −21 [cm −3 ]. This reduction is explained by the effect of plasmon which may play an important role in the superconductivity of low carrier systems such as heavily doped semiconductors.
“…The phenomenon was quickly demonstrated in both single-crystalline [9] and polycrystalline [10] diamond synthesised by chemical vapour deposition (CVD). While superconductivity in doped semiconductor materials [11,12] is an active area of research, and although nanocrystalline diamond retains many of the desirable mechanical properties of single-crystalline material [13], a sometimes overlooked property in the study of superconductivity in polycrystalline boron-doped diamond is the physical granularity itself.A clear experimental signature of superconducting granular systems, as pointed out by Lerner, Varlamov and Vinokur [5] (henceforth referred to as LVV), is that there are three distinct temperature regimes in the vicinity of the critical temperature (T c ), distinguished by the magnitude of the temperature-dependent GinzburgLandau coherence length. At temperatures immediately above T c , short-lived Cooper pairs act as charge carriers, modifying the conductivity.…”
mentioning
confidence: 99%
“…The phenomenon was quickly demonstrated in both single-crystalline [9] and polycrystalline [10] diamond synthesised by chemical vapour deposition (CVD). While superconductivity in doped semiconductor materials [11,12] is an active area of research, and although nanocrystalline diamond retains many of the desirable mechanical properties of single-crystalline material [13], a sometimes overlooked property in the study of superconductivity in polycrystalline boron-doped diamond is the physical granularity itself.…”
We present resistance versus temperature data for a series of boron-doped nanocrystalline diamond films whose grain size is varied by changing the film thickness. Upon extracting the fluctuation conductivity near to the critical temperature we observe three distinct scaling regions -3D intragrain, quasi-0D, and 3D intergrain -in confirmation of the prediction of Lerner, Varlamov and Vinokur. The location of the dimensional crossovers between these scaling regions allows us to determine the tunnelling energy and the Thouless energy for each film. This is a demonstration of the use of fluctuation spectroscopy to determine the properties of a superconducting granular system. Tunable granular materials offer rich physical systems with which to study the interplay between electron correlations and the mesoscopic effects of disorder. The occurrence of the metal-insulator and superconductorinsulator transitions appear to be strongly linked to granularity, be it structural or pertaining to variations of the order parameter [1][2][3]. There are also clear theoretical predictions for the signature of granularity in the transport properties of disordered superconductors close to the superconducting transition [4][5][6][7]. Boron doped nanocrystalline diamond (BNCD) provides a suitable tuneable material in which to explore these theoretical predictions. Superconductivity was first observed in high-pressure, high-temperature fabricated boron doped diamond in 2004 [8]. The phenomenon was quickly demonstrated in both single-crystalline [9] and polycrystalline [10] diamond synthesised by chemical vapour deposition (CVD). While superconductivity in doped semiconductor materials [11,12] is an active area of research, and although nanocrystalline diamond retains many of the desirable mechanical properties of single-crystalline material [13], a sometimes overlooked property in the study of superconductivity in polycrystalline boron-doped diamond is the physical granularity itself.A clear experimental signature of superconducting granular systems, as pointed out by Lerner, Varlamov and Vinokur [5] (henceforth referred to as LVV), is that there are three distinct temperature regimes in the vicinity of the critical temperature (T c ), distinguished by the magnitude of the temperature-dependent GinzburgLandau coherence length. At temperatures immediately above T c , short-lived Cooper pairs act as charge carriers, modifying the conductivity. The principal modification close to T c is the Aslamazov-Larkin pair contribution to the conductivity -the so-called paraconductivity [14]. When the coherence length is much larger than the typical grain size, the granularity is not seen by a Cooper pair and the system behaves as a 3D superconductor with paraconductivity taking the well-known form ∝ −1/2 , where = (T − T c )/T c is the reduced temperature. When the coherence length is comparable to the typical grain size, each grain acts as its own 0D superconductor for which the paraconductivity is expected to be ∝ −2 . However, in addition, the...
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